NEC Electronics Inc UPA1437H Datasheet

DATA SHEET

SILICON TRANSISTOR ARRAY

μPA1437

PNP SILICON POWER TRANSISTOR ARRAY

LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)

INDUSTRIAL USE

DESCRIPTION

The μPA1437 is PNP silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

•Easy mount by 0.1 inch of terminal interval.

•High hFE for Darlington Transistor.

ORDERING INFORMATION

Part Number	Package	Quality Grade
μPA1437H	10 Pin SIP	Standard

Please refer to "Quality grade on NEC Semiconductor Devices"

(Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)

Collector to Base Voltage	VCBO	–100	V
Collector to Emitter Voltage	VCEO	–100	V
Emitter to Base Voltage	VEBO	–7	V
Collector Current (DC)	IC(DC)	m3	A/unit
Collector Current (pulse)	IC(pulse)*	m6	A/unit
Base Current (DC)	IB(DC)	–0.3	A/unit
Total Power Dissipation	PT1**	3.5	W
Total Power Dissipation	PT2***	28	W
Junction Temperature	Tj	150	˚C
Storage Temperature	Tstg –55 to +150		˚C

*PW ≤ 300 μs, Duty Cycle ≤ 10 %

**4 Circuits, Ta = 25 ˚C

***4 Circuits, Tc = 25 ˚C

		PACKAGE DIMENSION
		(in millimeters)
	26.8 MAX.				4.0
10
2.5					10 MIN.
			2.54		1.4
1.4	0.6 ±0.1				0.5 ±0.1
1 2 3 4 5 6 7 8 910
		CONNECTION DIAGRAM
	3	5	7		9
2		4	6		8
1					10
		(C)
					PIN No.
			2, 4, 6, 8: Base (B)
(B)			3, 5, 7, 9: Collector (C)
			1, 10		: Emitter (E)
	R1	R2	.	8.3 kΩ
			R1 =.
			.	600 Ω
			R2 =.
		(E)

The information in this document is subject to change without notice.

Document No. IC-3516

Date Published September 1994 P

Printed in Japan

© 1994

μPA1437

ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)

CHARACTERISTIC	SYMBOL		MIN.	TYP.	MAX.	UNIT		TEST CONDITIONS
Collector to Emitter	VCEO(SUS)		–100			V	IC = –1.5 A, IB = –1.5 mA,
Sustaining Voltage							L = 1 mH
Collector Leakage Current	ICBO				–10	μA	VCB = –100 V, IE = 0
Emitter Leakage Current	IEBO				–1	mA	VEB = –5 V, IC = 0
DC Current Gain	hFE1	*	1000			—	VCE = –2 V, IC = –0.5 A
DC Current Gain	hFE2	*	2000		20000	—	VCE = –2 V, IC = –1.5 A
Collector Saturation Voltage	VCE(sat)	*		–0.9	–1.2	V	IC = –1.5 A, IB = –1.5 mA
Base Saturation Voltage	VBE(sat)	*		–1.5	–2	V	IC = –1.5 A, IB = –1.5 mA
Turn On Time	ton			1		μs	IC = –1.5 A
							IB1 = –IB2 = –1.5 mA
Storage Time	tstg			3		μs
							.	.
							VCC =.	50 V, RL =. 33 Ω
Fall Time	tf			1		μs
							See test circuit

* PW ≤ 350 μs, Duty Cycle ≤ 2 % / pulsed

SWITCHING TIME TEST CIRCUIT

.

33

Ω

RL =.

VIN

IB1

IC

Base Current

IB2

.

Wave Form

IB1

T.U.T.

IB2

VCC =.

–50 V

10 %

Collector

IC

Current

PW

90 %

.

Wave Form

.

VBB =.

5 V

μ s

PW =. 50

ton

tstg tf

Duty Cycle ≤ 2 %

2