DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1437
PNP SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1437 is PNP silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1437H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO –100 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, T
*** 4 Circuits, T
a = 25 ˚C
c = 25 ˚C
CEO –100 V
EBO –7 V
m
C(DC)
C(pulse)*
B(DC) –0.3 A/unit
T1** 3.5 W
T2*** 28 W
j 150 ˚C
stg –55 to +150 ˚C
3
m
A/unit
6
A/unit
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
(B)
R
1 R2
PACKAGE DIMENSION
(in millimeters)
4.0
2.54
CONNECTION DIAGRAM
579
468
(C)
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
(E)
: Base (B)
: Collector (C)
: Emitter (E)
.
1 = 8.3 kΩ
.
.
2 = 600 Ω
.
10 MIN.
1.4
0.5 ±0.1
10
Document No. IC-3516
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
y Cy
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector to Emitter VCEO(SUS) –100 V IC = –1.5 A, IB = –1.5 mA,
Sustaining Voltage L = 1 mH
Collector Leakage Current ICBO –10
Emitter Leakage Current IEBO –1 mA VEB = –5 V, IC = 0
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 3
Fall Time tf 1
*
1000 — VCE = –2 V, IC = –0.5 A
*
2000 20000 — VCE = –2 V, IC = –1.5 A
*
*
–0.9 –1.2 V IC = –1.5 A, IB = –1.5 mA
–1.5 –2 V IC = –1.5 A, IB = –1.5 mA
µ
A VCB = –100 V, IE = 0
µ
s
IC = –1.5 A
µ
µ
IB1 = –IB2 = –1.5 mA
s
s
.
VCC = 50 V, RL = 33 Ω
.
See test circuit
.
.
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
µ
PA1437
VIN
PW
.
PW = 50 s
Dut
.
µ
cle ≤ 2 %
B1
I
IB2
.
BB = 5 V
V
.
.
L = 33 Ω
R
.
IC
T.U.T.
.
V
CC = –50 V
.
Base Current
Wave Form
Collector
Current
Wave Form
10 %
90 %
on tstg tf
t
I
IB1
B2
IC
2
TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
100
80
60
S/b Limited
Dissipation Limited
–10
–5
–1
–0.5
SAFE OPERATING AREA
IC(pulse) MAX.
IC(DC) MAX.
Limited
Dissipation
µ
PA1437
PW = 30 s
100 s
300 s
µ
µ
1 ms
50 ms
S/b Limited
µ
40
20
dT - Percentage of Rated Current - %
0
50 100 150
C - Case Temperature - ˚C
T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NEC
PA1437
µ
4
3
2
PT - Total Power Dissipation - W
1
25 50 75 100 125 150
0
a - Ambient Temperature - ˚C
T
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
–0.1
IC - Collector Current - A
–0.05
TC = 25 ˚C
Single Pulse
–0.01
–1
V
–5 –10 –50 –100
CE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
20
10
PT - Total Power Dissipation - W
25 50 75 100 125 150
0
C - Case Temperature - ˚C
T
VCEO MAX.
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
DC CURRENT GAIN vs. COLLECTOR CURRENT
100000
125 ˚C
10000
75 ˚C
25 ˚C
Ta = –25 ˚C
1000
hFE - DC Current Gain
100
–0.01
–0.1 –1.0 –10
IC - Collector Current - A
V
CE = –2.0 V
Pulsed
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
–100
–10
–1.0
BE (sat) - Base Saturation Voltage - V
V
VCE (sat) - Collector Saturation Voltage - V
–0.1
–0.01
–0.1 –1.0 –10
I
C - Collector Current - A
BE (sat)
V
V
CE (sat)
I
C = 1000·IB
Pulsed
3
100
10
VCE ≤ 10 V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGETRANSIENT THERMAL RESISTANCE
–5.0
–500
–450
–4.0
–3.0
–350
–300
–250
–400
–200
–150
µ
PA1437
–2.0
1
IC - Collector Current - A
–1.0
Rth (j-c) - Transient Thermal Resistance - ˚C/W
0.1
0.1
1 10 100 –1.0 –2.0 –3.0 –4.0 –5.0
PW - Pulse Width - ms
0
CE - Collector to Emitter Voltage - V
V
–100
= –50 A
B
I
µ
4
µ
PA1437
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
5
[MEMO]
µ
PA1437
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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