Motorola BF199 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
25 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357 °C/W
Thermal Resistance, Junction to Case
R
q
JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
25 — —
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
40 — —
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
4.0 — —
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
I
CBO
— — 100
nAdc
Order this document
by BF199/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
BF199
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 7.0 mAdc, VCE = 10 Vdc)
h
FE
40 85 —
—
Base–Emitter On Voltage
(IC = 7.0 mAdc, VCE = 10 Vdc)
V
BE(on)
— 770 900
mVdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
400 750 —
MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
re
— 0.25 0.35
pF
Noise Figure
(IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 35 MHz)
N
f
— 2.5 —
dB
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