Motorola BD237 Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . designed f or use in 5 .0 to 1 0 Watt a udio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
80
Vdc
Collector–Base Voltage
V
CBO
100
Vdc
Emitter–Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
2.0
Adc
Base Current
I
B
1.0
Adc
Total Device Dissipation @ TC = 25_C
P
D
25
Watts
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
JC
5.0
_
C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
V
(BR)CEO
80
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
I
CBO
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
I
EBO
—
1.0
mAdc
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
h
FE1
h
FE2
40
25
—
—
Collector–Emitter Saturation Voltage*
(IC = 1.0 Adc, IB = 0.1 Adc)
V
CE(sat)
—
0.6
Vdc
Base–Emitter On Voltage*
(IC = 1.0 Adc, VCE = 2.0 Vdc)
V
BE(on)
—
1.3
Vdc
Current–Gain — Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
f
T
3.0
—
MHz
*Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD237/D
Motorola, Inc. 1995
2.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
25 WATTS
CASE 77–08
TO–225AA TYPE
REV 7
BD237
2
Motorola Bipolar Power Transistor Device Data
Figure 1. Active Region Safe Operating Area
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
3
1
0.1
3 10 30 100
0.3
I
C
, COLLECTOR CURRENT (AMP)
TJ = 150°C
dc
5 ms
1
100 µs
1 ms
BD237
BD236
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0
0.2
0.8
0.6
0.4
0.2
1.0 2.0 10 30 50 200
IC = 0.1 A 0.25 A 1.0 A0.5 A
0.3 0.5 100203.0 5.0
TJ = 25°C
1000
Figure 3. Current Gain
IC, COLLECTOR CURRENT (mA)
10
100
TJ = + 150°C
TJ = + 55°C
VCE = 2.0 V
h
FE
, DC CURRENT GAIN (NORMALIZED)
700
500
300
200
70
50
30
20
TJ = + 25°C
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
Figure 4. “On” Voltages
0
1.5
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
1.2
0.9
0.6
0.3
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
V
BE(sat)
@ IC/IB = 10
V
CE(sat)
@ IC/IB = 10
VOLTAGE (VOLTS)
VBE @ VCE = 2.0 V
Figure 5. Thermal Response
t, TIME or PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
θ
JC
(t) = r(t)
θ
JC
θ
JC
= 4.16
°
C/W MAX
θ
JC
= 3.5
°
C/W TYP
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
D = 0.5
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.01
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