Datasheet HMC280MS8G Datasheet (hittite)

查询HMC280MS8G供应商

MICROWAVE CORPORATION

Typical Applications

8

The HMC280MS8G is ideal for:

• UNII & HiperLAN

• ISM

Functional Diagram

AMPLIFIERS - SMT

v03.0703

HMC280MS8G

GaAs MMIC POWER AMPLIFIER

5.0 - 6.0 GHz

Features

Psat Output Power: +24 dBm

Output IP3: +38 dBm

High Gain: 18 dB

Single Supply: +3.6V

Ultra Small Package: MSOP8G

General Description

The HMC280MS8G is a +3.6V GaAs MMIC power
amplifi er covering 5 to 6 GHz. The device is pack­aged in a low cost, surface mount 8 lead MSOP
plastic package with an exposed base paddle for
improved RF ground and thermal dissipation. The
amplifi er provides 18 dB of gain and 24 dBm
Psat while operating from a single positive supply.
External component requirements are minimal
with the amplifi er occupying less than 0.023 sq.
in. (14.6 sq. mm). All data is taken with the
amplifi er assembled into a 50 ohm test fi xture
with the exposed base paddle connected to RF
ground. For transmit / receive applications use
with either the HMC223MS8 or HMC224MS8
SPDT switches.

8 - 8

Electrical Specifi cations, T

Parameter Min. Typ. Max. Units

Frequency Range 5.0 - 6.0 GHz

Gain 14 19 23 dB

Gain Flatness ±1.0 dB

Input Return Loss 8 12 dB

Reverse Isolation 40 44 dB

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat) 21 24 dBm

Output Third Order Intercept (IP3) 33 38 dBm

Noise Figure 13 dB

Supply Current (Idd)(Vdd1 = Vdd2 = +3.6 Vdc) 480 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

= +25° C, Vdd= +3.6V

A

5.0 - 5.5 Ghz

5.0 - 6.0 Ghz

Order Online at www.hittite.com

20
18

23
22

dBm

MICROWAVE CORPORATION

v03.0703

HMC280MS8G

GaAs MMIC POWER AMPLIFIER

5.0 - 6.0 GHz

Broadband Gain & Return Loss Gain vs. Temperature @ 3.6V

20

15

10

5

0

RESPONSE (dB)

-5

-10

-15
4 4.5 5 5.5 6 6.5 7

FREQUENCY (GHz)

S11
S21
S22

Psat vs. Supply Voltage Psat vs. Temperature @ 3.6V

30

28

26

24

22

20

18

OUTPUT PSAT (dBm)

16

14

4.5 5 5.5 6

FREQUENCY (GHz)

5V

3.6V

3.3V
3V

2.7V

30

25

20

15

GAIN (dB)

10

5

0

4 4.5 5 5.5 6 6.5 7

FREQUENCY (GHz)

30

28

26

24

22

20

18

OUTPUT PSAT (dBm)

16

14

4.5 5 5.5 6

FREQUENCY (GHz)

-40C
+25C
+70C

-40C
+25C
+70C

8

AMPLIFIERS - SMT

P1dB vs. Supply Voltage P1dB vs. Temperature @ 3.6V

30

28

26

24

22

20

18

OUTPUT P1dB (dBm)

16

14

4.5 5 5.5 6

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

5V

3.6V

3.3V
3V

2.7V

30

28

26

24

22

20

18

OUTPUT P1dB (dBm)

16

14

4.5 5 5.5 6

FREQUENCY (GHz)

-40C

+25C

+70C

8 - 9

MICROWAVE CORPORATION

v03.0703

HMC280MS8G

GaAs MMIC POWER AMPLIFIER

Power Compression @ 5.25 GHz Output IP3 vs Supply Voltage @ 6.0 GHz

8

30

25

20

15

10

5

Pout (dBm), GAIN (dB), PAE (%)

0

-10 -5 0 5 10 15

Output Power (dBm)

Gain (dB)

PAE (%)

INPUT POWER (dBm)

Output IP3 vs. Temperature @ 3.6V

AMPLIFIERS - SMT

50

45

5.0 - 6.0 GHz

50

45

40

35

OIP3 (dBm)

30

25

20

2.5 3 3.5 4 4.5 5 5.5

Vdd SUPPLY VOLTAGE (Vdc)

Output IP3 vs. Temperature @ 5.0V

50

45

-40C

+25C

+70C

40

35

OIP3 (dBm)

30

25

20

4.5 5 5.5 6

FREQUENCY (GHz)

0

-10

-20

-30

-40

-50

REVERSE ISOLATION (dB)

-60

4.5 5 5.5 6

40

35

OIP3 (dBm)

-40C

+25C

+70C

30

25

20

4.5 5 5.5 6

Reverse Isolation @ 3.6V

FREQUENCY (GHz)

FREQUENCY (GHz)

-40C
+25C
+70C

8 - 10

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v03.0703

HMC280MS8G

GaAs MMIC POWER AMPLIFIER

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc

RF Input Power (RFin) (Vdd = +3.6 Vdc) +20 dBm

Channel Temperature 150 °C

Continuous Pdiss (T = 85 °C)
(derate 41 mW/°C above 85 °C)

Thermal Resistance
(channel to ground paddle )

Storage Temperature -65 to +150 °C

Operating Temperature -55 to +85 °C

2.67 W

24.3 °C/W

Outline Drawing

5.0 - 6.0 GHz

8

AMPLIFIERS - SMT

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 11

MICROWAVE CORPORATION

v03.0703

HMC280MS8G

GaAs MMIC POWER AMPLIFIER

Recommended PCB Layout

8

AMPLIFIERS - SMT

5.0 - 6.0 GHz

8 - 12

List of Material

Item Description

J1, J2 PC Mount SMA Connector

J3, J4, J5 DC Pins

C1, C2 1000 pF Capacitor, 0603 Pkg.

C3, C4 100 pF Capacitor, 0402 Pkg.

L1 3.9 nH Inductor, 0402 Pkg.

U1 HMC280MS8G Amplifi er

PCB* 103104 Evaluation Board

*Circuit Board Material: Roger 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected directly
to the ground plane similar to that shown. A suffi cient
number of via holes should be used to connect the top
and bottom ground planes. The evaluation circuit board
shown is available from Hittite upon request.

Order Online at www.hittite.com

MICROWAVE CORPORATION

v03.0703

HMC280MS8G

GaAs MMIC POWER AMPLIFIER

Application Circuit

5.0 - 6.0 GHz

8

AMPLIFIERS - SMT

Note 1: Vdd1 and Vdd2 may be connected to a common Vdd feed after RF choke.

Recommended Component Values

L1 3.9 nH

C1 1000 pF

C2 100 pF

Note 2: L1 should be located < 0.020” (0.508 mm) from pin 8 (Vdd1).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 13