HIT HA13159 Datasheet

HA13159
37 W × 4-Channel BTL Power IC
ADE-207-264A (Z)
2nd Edition
Jul. 1999
Description
The HA13159 is four-channel BTL amplifier IC designed for car audio, featuring high output and low distortion, and applicable to digital audio equipment. It provides 37 W output per channel, with a 13.7 V power supply and at Max distortion.
Functions
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D and ASO)
Features
Low power dissipation
Soft thermal limiter
Requires few external parts (C:3, R:1)
Popping noise minimized
Low output noise
Built-in high reliability protectio n circuit
Pin to pin with HA13153A/HA13154A/HA13155/HA13157/HA13158/HA13158A
HA13159
Block Diagram
11
13
C2
0.1 µ/16 V
14
IN V
STBY
2
IN-1
1
IN-2
IN-3
CC
Buffer & Mute-1
Buffer & Mute-2
Buffer & Mute-3
PV
18
CC
PVCC1
2
Amp-1
Amp-2
Amp-3
4400 µ/16 V
6
C1
3
4
5
7
8
9
15
16
V
CC
13.2 V
R1
7.5 k
Notes: Standby
1. Power is turned on when a signal of
3.5 V or 0.05 mA is impressed at pin 2. When pin 2 is open or connected to GND, standby is turned on (output off).
Muting
2.
Muting is turned off (output on) when a signal of 3.5 V or 0.2 mA is impressed at pin 10. When pin 10 is open or connected to GND, muting is turned on (output off).
TAB (header of IC) connected to GND.3.
10
23
IN-4
MUTE
C3
5 V
5 V
Amp-4
2
10
Buffer & Mute-4
Protector (ASO, Surge, TSD)
12 22 TAB
10 µ/10 V
37.5 k
23.5 k
25 k
17
19
20
21
Unit R:
Q1 ON
BIAS ON
Q2 ON
MUTE ON
C: F
Rev.2, Jul. 1999, page 2 of 15
Absolute Maximum Ratings
Item Symbol Rating Unit
Operating supply voltage V Supply voltage when no signal* Peak supply voltage* Output current* Power dissipation*
2
3
4
1
CC
VCC (DC) 26 V VCC (PEAK) 50 V IO (PEAK) 4 A P
T
Junction temperature Tj 150 °C Operating temperature Topr –30 to +85 °C Storage temperature Tstg –55 to +125 °C Note: 1. Tolerance within 30 seconds.
2. Tolerance in surge pulse waveform.
3. Value per 1 channel.
4. Value when attached on the infinite heat sink plate at Ta = 25 °C. The derating carve is as shown in the graph below.
100
18 V
83 W
HA13159
83 W
(W)
T
50
28 W
Power dissipation P
0
25
A: When heat sink is infinite (θj-a = 1.5°C/W) B: When θf (thermal resistance of heat sink) = 3°C/W (θj-a = 4.5°C/W)
A
B
50
85
100
Ambient temperature Ta (°C)
150
Rev.2, Jul. 1999, page 3 of 15
HA13159
Electrical Characteristics (VCC = 13.2 V, f = 1 kHz, RL = 4 , Rg = 600 , Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Quiescent current I Output offset voltage ∆V Gain G Gain difference between
Q1
G
Q
V
V
channels Rated output power P
Max output power P
O
OMAX
Total harmonic distortion T.H.D. 0.03 % Po = 3 W Output noise voltage WBN 0.15 mVrms Rg = 0 Ω,
Ripple rejection SVR 55 dB f = 120 Hz Channel cross talk C.T. 70 dB Vout = 0 dBm Input impedance Rin 25 k Standby current I Standby control voltage (high) V Standby control voltage (low) V Muting control voltage (high) V Muting control voltage (low) V
Q2
STH
STL
MH
ML
Muting attenuation ATTM 70 dB Vout = 0 dBm
220 mA Vin = 0 –180 0 +180 mV
30.5 32 33.5 dB –1.0 0 +1.0 dB
—22—W V
= 13.2 V,
CC
THD = 10%, R
—37—W V
= 13.7 V, RL = 4
CC
BW = 20 to 20 kHz
——10µA
3.5 V
CC
V
0—1.5V
3.5 V
CC
V
0—1.5V
= 4
L
Rev.2, Jul. 1999, page 4 of 15

Pin Explanation

HA13159
Pin No. Symbol Functions
1 IN1 CH1 INPUT 25 k (Typ) 0 V
11 IN2 CH2 INPUT 13 IN3 CH3 INPUT 23 IN4 CH4 INPUT 2 STBY Standby control 90 k
3 OUT1 (+) CH1 OUTPUT VCC/2
5OUT1 () 7 OUT2 (+) CH2 OUTPUT 9OUT2 () 15 OUT3 (+) CH3 OUTPUT 17 OUT3 (–) 19 OUT4 (+) CH4 OUTPUT 21 OUT4 (–) 10 MUTE Muting control 25 k (Typ)
Input Impedance
(at Trs. cutoff)
DC Voltage Equivalence Circuit
1
25 k
37.5 k
2
23.5 k
3
10
25 k
22 RIPPLE Bias stability VCC/2
22
Rev.2, Jul. 1999, page 5 of 15
HA13159

Pin Explanation (cont)

Pin No. Symbol Functions
6PV
1 Power of
CC
Input Impedance
DC Voltage Equivalence Circuit
—VCC—
output stage 18 PVCC2 14 INV
CC
Power of
—VCC—
input stage 4 CH1 GND CH1 power GND — 8 CH2 GND CH2 power GND 16 CH3 GND CH3 power GND 20 CH4 GND CH4 power GND 12 IN GND Input signal GND
Rev.2, Jul. 1999, page 6 of 15
HA13159

Point of Application Board Design

1. Notes on Application Board’s Pattern Design
For increasing stability, the connected line of V
impedance.
For increasing stability, it is better to place the capacitor between V
It is better to place the grounding of resistor (Rg), between input line and ground, close to INGND (Pin
12) because if OUTGND is connected to the line between Rg and INGND, THD will become worse due to current from OUTGND.
and OUTGND is better to be made wider and lower
CC
and GND (0.1 µF) close to IC.
CC
Rg
0.1 µFV
6
1
12
3 4 5
CC
Figure 1 Notes on Application Board’s Pattern Design
2. How to Reduce the Popping Noise by Muting Circuit
At normal operating circuit, Muting circuit operates at high speed under 1 µs. In case popping noise becomes a problem, it is possible to reduce the popping noise by connecting
capacitor, which determines the switching time constant, between pin 10 and GND. (Following figure
2) We recommend value of capacitor greater then 1 µF. Also transitional popping noise can be reduced sharply by muting before V
5 V
0 V
7.5 k
4.7 µF
10
Muting control
and Standby are ON/OFF.
CC
Figure 2 How to use Muting Circuit
Table 1 Muting ON/OFF Time
C (µµµµF) ON Time OFF Time
nothing under 1 µs under 1 µs
0.47 2 ms 2 ms
4.7 19 ms 19 ms
Rev.2, Jul. 1999, page 7 of 15
HA13159

Characteristic Curves

(mA)
Q
Quiescent current I
400
300
200
100
Quiescent current vs. Supply Voltage
RL =
0
8 101214161820
0
Supply Voltage V
Output Power vs. Supply Voltage
60
RL = 4 Ω, f = 1 kHz, 4ch operation
50
40
30
20
Output Power Po, Pomax (W)
10
0
8 1012141618200
(V)
CC
Pomax (Vin = 4 Vrms)
Po (THD = 10 %)
Rev.2, Jul. 1999, page 8 of 15
Supply Voltage V
CC
(V)
Total Harmonic Distortion vs. Frequency
VCC = 13.2 V, RL = 4 , 80 kHz L.P.F ON
2 1
0.5
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01 20 50 100 200 500 1k 2k 5k510k 20k
Po = 1.5 W Po = 8 W
Frequency f (Hz)
HA13159
Total Harmonic Distortion vs. Output Power
10
VCC = 13.2 V, RL = 4 , 80 kHz L.P.F ON
5
2 1
0.5
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01
0.01
f = 100 Hz f = 1 kHz f = 10 kHz
0.02 0.05 0.1 0.2 0.5 1 2 5 Output Power Po (W)
10 20 30
Rev.2, Jul. 1999, page 9 of 15
HA13159
Crosstalk vs. Frequency (1)
70
60
50
(dB)
T
40
30
Crosstalk C
VCC = 13.2 V, Vout = 0 dBm,
20
80 kHz L.P.F, Input Ch1
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Ch2 Ch3 Ch4
Frequency f (Hz)
Crosstalk vs. Frequency (2)
70
60
50
(dB)
T
40
30
Crosstalk C
VCC = 13.2 V, Vout = 0 dBm,
20
80 kHz L.P.F, Input Ch2
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Ch1 Ch3 Ch4
Frequency f (Hz)
Rev.2, Jul. 1999, page 10 of 15
Crosstalk vs. Frequency (3)
70
60
50
(dB)
T
40
30
Crosstalk C
VCC = 13.2 V, Vout = 0 dBm,
20
80 kHz L.P.F, Input Ch3
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Ch1 Ch2 Ch4
Frequency f (Hz)
HA13159
Crosstalk vs. Frequency (4)
70
60
50
(dB)
T
40
30
Crosstalk C
VCC = 13.2 V, Vout = 0 dBm,
20
80 kHz L.P.F, Input Ch4
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Ch1 Ch2 Ch3
Frequency f (Hz)
Rev.2, Jul. 1999, page 11 of 15
HA13159
Supply Voltage Rejection Ratio vs. Frequency
70
60
50
40
30
VCC = 13.2 V, RL = 4 , Vripple = 0 dBm, 80 kHz L.P.F ON
20
10
Supply Voltage Rejection Ratio SVR (dB)
0
20 50 100 200 500 1k 2k 5k8010k 20k
Ch1 Ch2 Ch3 Ch4
Frequency f (Hz)
Wide Band Noise vs. Signal Source Resistance
VCC = 13.2 V, RL = 4 , Vin = 0
2 1
0.5
0.2
0.1
0.05
Wide Band Noise WBN (mV)
0.02
0.01 20 50 100 200 500 1k 2k 5k510k 20k
Mute OFF (Ch1–Ch4)
Mute ON (Ch1–Ch4)
Signal Source Resistance Rg ()
50k
Rev.2, Jul. 1999, page 12 of 15
Power Dissipation vs. Output Power
100
RL = 4 , f = 1 kHz, 1ch operation
50
VCC = 13.2 V
= 14.4 V
V
CC
VCC = 16 V
(W)
T
20
10
5
Power Dissipation P
2
1
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 30 Output Power Po (W)
HA13159
Power Dissipation vs. Frequency
(W)
T
10
5
Power Dissipation P
VCC = 13.2 V, RL = 4 , Po = 10 W, 1ch operation
0
20 50 100 200 500 1k 2k 5k1510k 20k
Frequency f (Hz)
Rev.2, Jul. 1999, page 13 of 15
HA13159
Package Dimensions
3.80 ± 0.05
17.50 ± 0.13
30.18 ± 0.25
19.81
4.32 ± 0.05
φ
3.80 ± 0.05
2.79
2 – R1.84 ± 0.19
10.70 ± 0.12
4.50 ± 0.12
+ 0.05
1.55
– 0.1
17.78 ± 0.254.14 ± 0.33
Unit: mm
1.12
0.70
+0.09 –0.1
0.25
27.94
231
M
1.27
+ 0.06
0.40
– 0.04
Hitachi Code JEDEC EIAJ
(reference value)
Weight
5.08
4.29
SP-23TE Conforms
8.5 g
Rev.2, Jul. 1999, page 14 of 15
HA13159
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, in cluding intellectual property rights, in connection with u se of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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Colophon 2.0
Rev.2, Jul. 1999, page 15 of 15
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