HIT 2SK3076-S, 2SK3076-L Datasheet

2SK3076(L),2SK3076(S)

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-656 (Z)

1st. Edition

Jun 1998

Features

• Low on-resistance

• High speed switching

• Low drive current.

• Built-in fast recovery diode (trr=120 ns)

Outline

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

LDPAK

G

D

S

2SK3076(L),2SK3076(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

500 V

Gate to source voltage V

GSS

±30 V

Drain current I

D

7A

Drain peak current I

D(pulse)

Note1

28 A

Body-drain diode reverse drain current I

DR

7A

Channel dissipation Pch

Note2

60 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

500 — — V ID = 10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±30——V I

G

= ±100µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±25V, VDS = 0

Zero gate voltege drain current I

DSS

— — 250 µAVDS = 400 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

2.0 — 3.0 V ID = 1mA, VDS = 10V

Static drain to source on state R

DS(on)

— 0.7 0.9 Ω ID = 4A, VGS = 10V

Note4

resistance
Forward transfer admittance |yfs| 3.5 6.0 — S ID = 4A, VDS = 10V

Note4

Input capacitance Ciss — 1100 — pF VDS = 10V
Output capacitance Coss — 310 — pF VGS = 0
Reverse transfer capacitance Crss — 50 — pF f = 1MHz
Turn-on delay time t

d(on)

— 15 — ns ID =4A, VGS = 10V

Rise time t

r

— 55 — ns RL = 7.5Ω

Turn-off delay time t

d(off)

— 100 — ns

Fall time t

f

—48—ns

Body–drain diode forward voltage V

DF

— 0.9 — V IF = 7A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 120 — ns IF = 7A, VGS = 0

diF/ dt =100A/µs

Note: 4. Pulse test

2SK3076(L),2SK3076(S)

3

Main Characteristics

80

60

40

20

0

50 100 150 200

20

16

12

8

4

0

10 V

10 20 30 40 50

20

16

12

8

4

0

246810

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

V = 20 V
Pulse Test

DS

0.1 0.3 1

3

10

30

100

100

30
10

3
1

0.3

0.1

0.03

0.01

DC Operation (Tc = 25°C)

Ta = 25 °C

10 µs

100 µs

1 ms

PW = 10 ms (1shot)

Operation in
this area is
limited by R

DS(on)

6 V

4 V

5 V

75°C

–25°C

Ta = 25°C

V = 4 V

GS

Pulse Test