HIT 2SC3380 Datasheet

Silicon NPN Triple Diffused

Application

• High frequency high voltage amplifier

• High voltage switch

Outline

2SC3380

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation PC*
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

CBO

CEO

EBO

C

1

300 V
300 V
5 V
100 mA
1 W

2SC3380

2

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I
Collector to emitter saturation

voltage
DC current transfer ratio h
Gain bandwidth product f
Collector output capacitance Cob — — 4 pF VCB = 20 V, IE = 0, f = 1 MHz

Note: Marking is “AS”.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CEO

V

CE(sat)

FE

T

300 — — V IC = 10 µA, IE = 0

300 — — V IC = 1 mA, RBE = ∞

5 — — V IE = 10 µA, IC = 0

— — 1 µA VCE = 250 V, RBE = ∞
— — 1.5 V IC = 20 mA, IB = 2 mA

30 — 200 VCE = 20 V, IC = 20 mA
— 80 — MHz VCE = 20 V, IC = 20 mA