HIT 2SC3512 Datasheet

2SC3512

Silicon NPN Epitaxial

Application

UHF / VHF wide band amplifier

Outline

2SC3512

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	15	V
Collector to emitter voltage	VCEO	11	V
Emitter to base voltage	VEBO	2	V
Collector current	IC	50	mA
Collector power dissipation	PC	600	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	15	—	—	V	IC = 10 µA, IE = 0
voltage
Collector to cutoff current	ICEO	—	—	1	µA	VCE = 10 V, RBE = ∞
Emitter cutoff current	IEBO	—	—	1	µA	VEB = 1 V, IC = 0
Collector cutoff current	ICBO	—	—	1	µA	VCB = 12 V, IE = 0
DC current transfer ratio	hFE	50	120	250		VCE = 5 V, IC = 20 mA
Collector output capacitance	Cob	—	1.2	1.6	pF	VCB = 5	V, IE = 0, f = 1 MHz
Gain bandwidth product	fT	—	6.0	—	GHz	VCE = 5	V, IC = 20 mA
Power gain	PG	—	10.5	—	dB	VCE = 5	V, IC = 20 mA,
						f = 900 MHz
Noise figure	NF	—	1.6	—	dB	VCE = 5	V, IC = 5 mA,
						f = 900 MHz

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