HIT 2SC3512 Datasheet

Loading...
HIT 2SC3512 Datasheet

2SC3512

Silicon NPN Epitaxial

Application

UHF / VHF wide band amplifier

Outline

2SC3512

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

15

V

Collector to emitter voltage

VCEO

11

V

Emitter to base voltage

VEBO

2

V

Collector current

IC

50

mA

 

 

 

 

Collector power dissipation

PC

600

mW

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

15

V

IC = 10 µA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to cutoff current

ICEO

1

µA

VCE = 10 V, RBE =

Emitter cutoff current

IEBO

1

µA

VEB = 1 V, IC = 0

Collector cutoff current

ICBO

1

µA

VCB = 12 V, IE = 0

DC current transfer ratio

hFE

50

120

250

 

VCE = 5 V, IC = 20 mA

Collector output capacitance

Cob

1.2

1.6

pF

VCB = 5

V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

6.0

GHz

VCE = 5

V, IC = 20 mA

 

 

 

 

 

 

 

 

Power gain

PG

10.5

dB

VCE = 5

V, IC = 20 mA,

 

 

 

 

 

 

f = 900 MHz

 

 

 

 

 

 

 

 

Noise figure

NF

1.6

dB

VCE = 5

V, IC = 5 mA,

 

 

 

 

 

 

f = 900 MHz

 

 

 

 

 

 

 

 

2

+ 3 hidden pages