HIT 2SC3413 Datasheet

2SC3413

Silicon NPN Epitaxial

Application

∙Low frequency low noise amplifier

∙HF amplifier

Outline

2SC3413

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	40	V
Collector to emitter voltage	VCEO	30	V
Emitter to base voltage	VEBO	5	V
Collector current	IC	100	mA
Collector power dissipation	PC	300	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	40	—	—	V	IC = 10 µA, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	30	—	—	V	IC = 1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	5	—	—	V	IE = 10 µA, IC = 0
voltage
Collector cutoff current	ICBO	—	—	0.5	µA	VCB =			18	V, IE = 0
Emitter cutoff current	IEBO	—	—	0.5	µA	VEB =			2 V, IC = 0
DC current transfer ratio	h *1	100	—	500		V	CE	=	12	V, I = 2 mA
	FE									C
Base to emitter voltage	VBE	—	—	0.75	V	VCE =			12	V, IC = 2 mA
Collector to emitter saturation	VCE(sat)	—	—	0.2	V	IC = 10 mA, IB = 1 mA
voltage
Gain bandwidth product	fT	—	200	—	MHz	VCE =			12	V, IC = 2 mA
Collector output capacitance	Cob	—	—	3.5	pF	VCB =			10	V, IE = 0, f = 1 MHz
Noise figure	NF	—	1.0	5.0	dB	VCE =			6 V, IC = 0.1 mA,
						Rg = 1 kΩ, f = 1 kHz

Note: 1. The 2SC3413 is grouped by hFE as follows.

B	C	D
100 to 200	160 to 320	250 to 500

See characteristic curves of 2SC458(LG).

2