Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• HF amplifier
Outline
2SC3413
2SC3413
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
40 V
Collector to emitter voltage V
CEO
30 V
Emitter to base voltage V
EBO
5 V
Collector current I
C
100 mA
Collector power dissipation P
C
300 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
voltage
Gain bandwidth product f
Collector output capacitance Cob — — 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Noise figure NF — 1.0 5.0 dB VCE = 6 V, IC = 0.1 mA,
Note: 1. The 2SC3413 is grouped by hFE as follows.
B C D
100 to 200 160 to 320 250 to 500
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
BE
V
CE(sat)
T
40 — — V IC = 10 µA, IE = 0
30 — — V IC = 1 mA, RBE = ∞
5 — — V IE = 10 µA, IC = 0
— — 0.5 µA VCB = 18 V, IE = 0
— — 0.5 µA VEB = 2 V, IC = 0
1
100 — 500 VCE = 12 V, IC = 2 mA
— — 0.75 V VCE = 12 V, IC = 2 mA
— — 0.2 V IC = 10 mA, IB = 1 mA
— 200 — MHz VCE = 12 V, IC = 2 mA
Rg = 1 kΩ, f = 1 kHz
See characteristic curves of 2SC458(LG).
2SC3413
3
2SC3413
4
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examples described herein.
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