HIT 2SC3470 Datasheet

Loading...
HIT 2SC3470 Datasheet

2SC3470

Silicon NPN Epitaxial

Application

Low frequency amplifier

Outline

2SC3470

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

55

V

Collector to emitter voltage

VCEO

50

V

Emitter to base voltage

VEBO

5

V

Collector current

IC

100

mA

 

 

 

 

Collector power dissipation

PC

300

mW

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

55

V

IC = 10 µA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

50

V

IC = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

5

V

IE = 10 µA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

0.5

µA

VCB =

18

V, IE = 0

Emitter cutoff current

IEBO

0.5

µA

VEB =

2 V, IC = 0

DC current transfer ratio

h *1

250

1200

 

V

CE

=

12

V, I = 2 mA

 

FE

 

 

 

 

 

 

 

C

Base to emitter voltage

VBE

0.75

V

VCE =

12

V, IC = 2 mA

Collector to emitter saturation

VCE(sat)

0.2

V

IC = 10 mA, IB = 1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

230

MHz

VCE =

12

V, IC = 2 mA

 

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

1.8

3.5

pF

VCB =

10

V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

Note: 1. The 2SC3470 is grouped by hFE as follows.

D

E

F

250 to 500

400 to 800

600 to 1200

 

 

 

See characteristic curves of 2SC1345.

2

+ 2 hidden pages