HIT 2SC3470 Datasheet

2SC3470

Silicon NPN Epitaxial

Application

Low frequency amplifier

Outline

2SC3470

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	55	V
Collector to emitter voltage	VCEO	50	V
Emitter to base voltage	VEBO	5	V
Collector current	IC	100	mA
Collector power dissipation	PC	300	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	55	—	—	V	IC = 10 µA, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	50	—	—	V	IC = 1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	5	—	—	V	IE = 10 µA, IC = 0
voltage
Collector cutoff current	ICBO	—	—	0.5	µA	VCB =			18	V, IE = 0
Emitter cutoff current	IEBO	—	—	0.5	µA	VEB =			2 V, IC = 0
DC current transfer ratio	h *1	250	—	1200		V	CE	=	12	V, I = 2 mA
	FE									C
Base to emitter voltage	VBE	—	—	0.75	V	VCE =			12	V, IC = 2 mA
Collector to emitter saturation	VCE(sat)	—	—	0.2	V	IC = 10 mA, IB = 1 mA
voltage
Gain bandwidth product	fT	—	230	—	MHz	VCE =			12	V, IC = 2 mA
Collector output capacitance	Cob	—	1.8	3.5	pF	VCB =			10	V, IE = 0, f = 1 MHz

Note: 1. The 2SC3470 is grouped by hFE as follows.

D	E	F
250 to 500	400 to 800	600 to 1200

See characteristic curves of 2SC1345.

2