HIT 2SC2732 Datasheet

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HIT 2SC2732 Datasheet

2SC2732

Silicon NPN Epitaxial

Application

UHF frequency converter

Outline

2SC2732

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

30

V

Collector to emitter voltage

VCEO

25

V

Emitter to base voltage

VEBO

4

V

Collector current

IC

20

mA

 

 

 

 

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

30

V

IC = 10 µA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

25

V

IC = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

4

V

IE = 10 µA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

0.5

µA

VCB = 10 V, IC = 0

Collector to emitter saturation

VCE(sat)

5

V

IC = 10 mA, IB = 1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

DC current transfer ratio

hFE

30

60

 

VCE = 10 V, IC = 3 mA

Gain bandwidth product

fT

700

1000

MHz

VCE = 10 V, IC = 5 mA

 

 

 

 

 

 

 

Collector output capacitance

Cob

0.5

0.8

pF

VCB = 10 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

Conversion gain

CG

7.0

dB

VCC = 12 V, IC = 1 mA,

 

 

 

 

 

 

f = 900 MHz,

 

 

 

 

 

 

fOSC = 930 MHz (0dBm) ,

 

 

 

 

 

 

fout = 30 MHz

 

 

 

 

 

 

 

Noise figure

NF

10.0

dB

VCC = 12 V, IC = 1 mA,

 

 

 

 

 

 

f = 900 MHz,

 

 

 

 

 

 

fOSC = 930 MHz (0dBm) ,

 

 

 

 

 

 

fout = 30 MHz

 

 

 

 

 

 

 

Note: Marking is “EC”.

 

 

 

 

 

 

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