HIT 2SC2732 Datasheet

2SC2732

Silicon NPN Epitaxial

Application

UHF frequency converter

Outline

2SC2732

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	30	V
Collector to emitter voltage	VCEO	25	V
Emitter to base voltage	VEBO	4	V
Collector current	IC	20	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	30	—	—	V	IC = 10 µA, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	25	—	—	V	IC = 1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	4	—	—	V	IE = 10 µA, IC = 0
voltage
Collector cutoff current	ICBO	—	—	0.5	µA	VCB = 10 V, IC = 0
Collector to emitter saturation	VCE(sat)	—	—	5	V	IC = 10 mA, IB = 1 mA
voltage
DC current transfer ratio	hFE	30	60	—		VCE = 10 V, IC = 3 mA
Gain bandwidth product	fT	700	1000	—	MHz	VCE = 10 V, IC = 5 mA
Collector output capacitance	Cob	—	0.5	0.8	pF	VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain	CG	—	7.0	—	dB	VCC = 12 V, IC = 1 mA,
						f = 900 MHz,
						fOSC = 930 MHz (0dBm) ,
						fout = 30 MHz
Noise figure	NF	—	10.0	—	dB	VCC = 12 V, IC = 1 mA,
						f = 900 MHz,
						fOSC = 930 MHz (0dBm) ,
						fout = 30 MHz
Note: Marking is “EC”.

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