HIT 2SC3380 Datasheet

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HIT 2SC3380 Datasheet

2SC3380

Silicon NPN Triple Diffused

Application

High frequency high voltage amplifier

High voltage switch

Outline

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

300

V

Collector to emitter voltage

VCEO

300

V

Emitter to base voltage

VEBO

5

V

Collector current

IC

100

mA

 

 

 

 

Collector power dissipation

PC*1

1

W

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

2SC3380

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

300

V

IC = 10 µA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

300

V

IC = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

5

V

IE = 10 µA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICEO

1

µA

VCE = 250 V, RBE =

Collector to emitter saturation

VCE(sat)

1.5

V

IC = 20 mA, IB = 2 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC current transfer ratio

hFE

30

200

 

VCE = 20

V, IC = 20 mA

Gain bandwidth product

fT

80

MHz

VCE = 20

V, IC = 20 mA

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

4

pF

VCB = 20

V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

Note: Marking is “AS”.

 

 

 

 

 

 

 

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