HIT 2SC3380 Datasheet

2SC3380

Silicon NPN Triple Diffused

Application

∙High frequency high voltage amplifier

∙High voltage switch

Outline

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	300	V
Collector to emitter voltage	VCEO	300	V
Emitter to base voltage	VEBO	5	V
Collector current	IC	100	mA
Collector power dissipation	PC*1	1	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Note: 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

2SC3380

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	300	—	—	V	IC = 10 µA, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	300	—	—	V	IC = 1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	5	—	—	V	IE = 10 µA, IC = 0
voltage
Collector cutoff current	ICEO	—	—	1	µA	VCE = 250 V, RBE = ∞
Collector to emitter saturation	VCE(sat)	—	—	1.5	V	IC = 20 mA, IB = 2 mA
voltage
DC current transfer ratio	hFE	30	—	200		VCE = 20	V, IC = 20 mA
Gain bandwidth product	fT	—	80	—	MHz	VCE = 20	V, IC = 20 mA
Collector output capacitance	Cob	—	—	4	pF	VCB = 20	V, IE = 0, f = 1 MHz
Note: Marking is “AS”.

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