HIT 2SC1213A, 2SC1213 Datasheet

2SC1213, 2SC1213A

Silicon NPN Epitaxial

Application

•Low frequency amplifier

•Complementary pair with 2SA673 and 2SA673A

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC1213, 2SC1213A

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SC1213	2SC1213A	Unit
Collector to base voltage	VCBO	35	50	V
Collector to emitter voltage	VCEO	35	50	V
Emitter to base voltage	VEBO	4	4	V
Collector current	IC	500	500	mA
Collector power dissipation	PC	400	400	mW
Junction temperature	Tj	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

				2SC1213													2SC1213A
Item		Symbol		Min	Typ					Max							Min							Typ		Max		Unit	Test conditions
Collector to base		V(BR)CBO		35	—			—									50							—		—	V	I	C = 10 A, IE = 0
breakdown voltage
Collector to emitter		V(BR)CEO		35	—			—									50							—		—	V	I	C = 1 mA, RBE = ∞
breakdown voltage
Emitter to base		V(BR)EBO		4	—			—									4							—		—	V	I	E = 10 A, IC = 0
breakdown voltage
Collector cutoff current		ICBO		—	—		0.5										—							—	0.5			A	VCB = 20 V, IE = 0
DC current tarnsfer ratio h			*1	60	—		320										60							—		320		V	CE	= 3 V, I	=10 mA
		FE																													C
		hFE		10	—			—									10							—		—		V	CE = 3 V,
																													IC = 500 mA*2
Collector to emitter		VCE(sat)		—	0.2		0.6										—							0.2		0.6	V	I	C = 150 mA,
saturation voltage																													IB = 15 mA*2
Base to emitter voltage		VBE		—	0.64			—									—							0.64		—	V	V	CE = 3 V, IC = 10 mA
Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.
2.	Pulse test
B	C		D
60 to 120	100 to 200		160 to 320

2