HIT 2SC4196 Datasheet

2SC4196

Silicon NPN Epitaxial

Application

UHF Local oscillator

Outline

MPAK

3

		1	Emitter
		1.
	2	2.	Base
		3.	Collector

2SC4196

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	25	V
Collector to emitter voltage	VCEO	15	V
Emitter to base voltage	VEBO	3	V
Collector current	IC	50	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit		Test conditions
Collector to base breakdown	V(BR)CBO	25	—	—	V	I	C = 10 A, IE = 0
voltage
Collector cutoff current	ICBO	—	—	0.3	A		VCB = 15 V, IE = 0
	ICEO	—	—	10	A		VCE = 15 V, RBE = ∞
Emitter cutoff current	IEBO	—	—	1.0	A		VEB = 3	V, IC = 0
Collector to emitter saturation	VCE(sat)	—	—	0.3	V	I	C = 20 mA, IB = 4 mA
voltage
DC current transfer ratio	hFE	50	—	180		V CE = 5		V, IC = 5 mA
Collector output capacitance	Cob	—	0.7	1.0	pF	V CB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product	fT	1.8	2.4	—	GHz	V CE = 5		V, IC = 20 mA
Oscillating output voltage	VOSC	—	200	—	mV	V	CC = 5	V, IC = 5 mA,
							f = 930 MHz

Note: Marking is “QI–”.

2

Collector Power Dissipation PC (mW)

Gain Bandwidth Product fT (GHz)

Maximum Collector Dissipation Curve

150

100

50

0

50

100

150

Ambient Temperature Ta (°C)

Gain Bandwidth Product vs. Collector Current

4

VCE = 5 V Pulse

3

2

1

0

1	2	5	10	20	50
	Collector Current			IC (mA)

2SC4196

				DC Current Transfer Ratio vs.
					Collector Current
	200
FE				VCE =	5 V
				Pulse
h	160
Ratio
Transfer	120
Current	80
	40
DC
	0
								10						20			50
	1		2			5
				Collector Current IC (mA)
			Collector Output Capacitance vs.
				Collector to Base Voltage
(pF)	1.1
ob			I	E = 0
	1.0		f	= 1 MHz
C
Capacitance	0.9
Output	0.8
	0.7
Collector
	0.6
	1		2			5		10						20			50

Collector to Base Voltage VCB (V)

3