HIT 2SC3957 Datasheet

2SC3957

Silicon NPN Epitaxial, Darlington

Application

High gain amplifier

Outline

2SC3957

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	40	V
Collector to emitter voltage	VCEO	30	V
Emitter to base voltage	VEBO	10	V
Collector current	IC	300	mA
Collector peak current	IC (peak)	500	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

V(BR)CEO

30

—

—

V

IC = 1 mA, RBE = ∞

voltage

Collector cutoff current

ICBO

—

—

100

nA

VCB = 30 V, IE = 0

Emitter cutoff current

IEBO

—

—

100

nA

VEB = 10 V, IC = 0

DC current transfer ratio

h

*1

2000

—

100000

I

C

= 10 mA, V

CE

= 5 V*2

FE1

h

*1

3000

—

—

I

C

= 100 mA, V

= 5 V*2

FE2

CE

h

*1

3000

—

—

I

C

= 400 mA, V

= 5 V*2

FE3

CE

Collector to emitter saturation

VCE(sat)

—

—

1.5

V

IC = 100 mA, IB = 0.1 mA*2

voltage

Base to emitter saturation

VBE(sat)

—

—

2.0

V

IC = 100 mA, IB = 0.1 mA*2

voltage

Notes: 1. The 2SC3957 is grouped by hFE as follows.

2.

Pulse test

Mark

GIA

GIB

hFE1

2000 to 100000

5000 to 100000

hFE2

3000 min

10000 min

hFE3

3000 min

10000 min

2