HIT 2SC3957 Datasheet

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HIT 2SC3957 Datasheet

2SC3957

Silicon NPN Epitaxial, Darlington

Application

High gain amplifier

Outline

2SC3957

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

40

V

Collector to emitter voltage

VCEO

30

V

Emitter to base voltage

VEBO

10

V

Collector current

IC

300

mA

 

 

 

 

Collector peak current

IC (peak)

500

mA

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

 

Collector to emitter breakdown

 

V(BR)CEO

30

 

V

IC = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

100

nA

VCB = 30 V, IE = 0

 

Emitter cutoff current

 

IEBO

100

nA

VEB = 10 V, IC = 0

 

DC current transfer ratio

 

h

*1

2000

100000

 

I

C

= 10 mA, V

CE

= 5 V*2

 

 

 

 

FE1

 

 

 

 

 

 

 

 

 

 

 

 

h

*1

3000

 

I

C

= 100 mA, V

 

= 5 V*2

 

 

 

 

FE2

 

 

 

 

 

 

 

CE

 

 

 

 

h

*1

3000

 

I

C

= 400 mA, V

 

= 5 V*2

 

 

 

 

FE3

 

 

 

 

 

 

 

CE

 

Collector to emitter saturation

 

VCE(sat)

1.5

V

IC = 100 mA, IB = 0.1 mA*2

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter saturation

 

VBE(sat)

2.0

V

IC = 100 mA, IB = 0.1 mA*2

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes: 1. The 2SC3957 is grouped by hFE as follows.

 

 

 

 

 

 

 

 

2.

Pulse test

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mark

GIA

GIB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE1

2000 to 100000

5000 to 100000

 

 

 

 

 

 

 

 

 

hFE2

3000 min

10000 min

 

 

 

 

 

 

 

 

 

 

 

hFE3

3000 min

10000 min

 

 

 

 

 

 

 

 

 

 

 

2

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