HIT 2SC3336 Datasheet

2SC3336
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base
2. Collector (Flange)
1
2
3
2SC3336
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current I Base current I Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain V voltage V
Emitter to base breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn on time t Storage time t Fall time t
Note: 1. Pulse test
CEO(sus)
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 V IC = 0.2 A, RBE = , L = 100 mH 400 V IC = 15 A, IB1 = 3.0 A, IB2 = –1 A
10 V IE = 10 mA, IC = 0
50 µA VCB = 400 V, IE = 0 — 50 µA VCE = 350 V, RBE = 12 VCE = 5.0 V, IC = 7.5 A* 5—— V — 1.0 V IC = 7.5 A, IB = 1.5 A*
1.5 V
0.5 µs IC = 15 A, IB1 = –IB2 = 3.0 A — 1.5 µs VCC = 150 V — 0.3 0.5 µs
500 V 400 V 10 V 15 A 25 A
7.5 A 100 W
V
= –5.0 V, L = 180 µH,
BE
Clamped
= 5.0 V, IC = 15 A*
CE
1
1
1
2
2SC3336
Maximum Collector Dissipation
Curve
150
(W)
C
100
50
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
Collector Current Derating Rate
100
80
IS/B Limit Area
60
100
i
C(peak)
30 10
I
C(max)
(A)
C
3
1.0
0.3 Ta = 25°C, 1 Shot
0.1
Collector current I
0.03
0.01 1 3 30 30010 100 1,000
Collector to emitter voltage V
Transient Thermal Resistance
10
3
(°C/W)
j-c
1.0
0.3
Area of Safe Operation
250 µs
PW = 10 ms
1 ms
DC Operation
T
C
= 25°C
TC = 25°C
10 ms–10 s
50 µs
CE
25 µs
(V)
40
20
Collector current derating rate (%)
0 50 100 150
Case temperature T
(°C)
C
Thermal resistance θ
0.1
0.03
10 µs–10 ms
0.01
0.01 0.1 1.0 10 (s)
0.01 0.1 1.0 10 (ms) Time t
3
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