HIT 2SC2979 Datasheet
2SC2979
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Base current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
900 V
800 V
7V
3A
6A
1.5 A
40 W
2SC2979
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Storage time t
Fall time t
Note: 1. Pulse test
V
CEO(sus)
V
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
800 — — V IC = 0.2 A, RBE = ∞, L = 100
mH
800 — — V IC = 3 A, IB1 = 0.9 A, IB2 = –0.6
A, V
= –5.0 V, L = 180 µH,
BE
Clamped
7——VI
= 10 mA, IC = 0
E
— — 100 µAVCB = 750 V, IE = 0
— — 100 µAVCE = 650 V, RBE = ∞
15 — — VCE = 5 V, IC = 0.3 A*
7—— V
= 5 V, IC = 1.5 A*
CE
— — 1.0 V IC = 0.75 A, IB = 0.15 A*
— — 1.5 V
— — 1.0 µsI
= 1.5 A, IB1 = 0.3 A,
C
— — 3.0 µsIB2 = –0.75 A, VCC ≅ 250 V
— — 1.0 µs
1
1
1
Maximum Collector Dissipation
Curve
60
(W)
C
40
20
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
Area of Safe Operation
10
i
C(peak)
3
I
(Continuous)
(A)
C
Cmax
1.0
0.3
PW = 10 ms
DC Operation
T
C
= 25°C
0.1
0.03
Ta = 25°C, 1 Shot
0.01
Collector current I
0.003
0.001
1 3 30 30010 100 1,000
Collector to emitter voltage VCE (V)
250 µs
1 ms
25 µs
50 µs
2
100
80
Collector Current Derating Rate
IS/B Limit Area
(°C/W)
j-c
1.0
2SC2979
Transient Thermal Resistance
10
3
10 ms–10 s
60
40
20
Collector current derating rate (%)
0 50 100 150
Case temperature T
(°C)
C
Reverse Bias Area of Safe Operation
10
8
(A)
C
6
600 V, 6 A
4
Collector current I
2
IB2 = –0.6 A
800 V, 3 A
850 V, 1.0 A
0.3
10 µs–10 ms
TC = 25°C
Thermal resistance θ
0.1
0.03
0.01
0.01 0.1 1.0 10 (s)
0.01 0.1 1.0 10 (ms)
Time t
Collector to Emitter Voltage
vs. Base to Emitter Resistance
1,000
(V)
(BR)CER
IC = 1 mA
900
800
0 200
400 600 800 1,000
Collector to emitter voltage VCE (V)
Collector to emitter voltage V
700
100 1 k
Base to emitter resistance R
10 k 100 k 1 M
(Ω)
BE
3
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