HIT 2SC2899 Datasheet
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
TO-126 MOD
2SC2899
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
CBO
CEO
EBO
C
C(peak)
C
PC*
1
500 V
400 V
10 V
0.5 A
1.0 A
0.75 W
10 W
2SC2899
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Storage time t
Fall time t
Note: 1. Pulse test
V
CEO(sus)
V
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 — — V IC = 0.1 A, RBE = , L = 100
mH
400 — — V IC = 0.5 A, IB1 = –IB2 = 0.1 A,
V
= –5 V, L = 180 µH,
BE
Clamped
10 — — V IE = 10 mA, IC = 0
— — 20 µA VCB = 400 V, IC = 0
— — 50 µA VCE = 350 V, RBE =
15 — — VCE = 5 V, IC = 0.25 A*
7—— V
= 5 V, IC = 0.5 A*
CE
— — 1.0 V IC = 0.25 A, IB = 0.05 A*
— — 1.5 V
— — 1.0 µs IC = 0.5 A, IB1 = –IB2 = 0.1 A,
— — 2.0 µs VCC ≅ 150 V
— — 1.0 µs
1
1
1
Maximum Collector Dissipation Curve
12
8
1
Collector power dissipation Pc (W)
0
50 100 150
Case Temperature T
C
(°C)
Area of Safe Operation
10
iC
(peak)
1.0
(A)
C
IC
(max)
(Continuous)
0.1
Ta = 25°C, 1 Shot
0.01
Collector Current I
PW = 1 ms
DC Operation
(T
C
= 25°C)
0.001
1 3 10 30 100 300 1,000
Collector to emitter Voltage VCE (V)
50 µs
25 µs
250 µs
2
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