HIT 2SC2898 Datasheet
2SC2898
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Base current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
500 V
400 V
7V
8A
16 A
4A
50 W
2SC2898
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Storage time t
Fall time t
Note: 1. Pulse test
V
CEO(sus)
V
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 — — V IC = 0.2 A, RBE = ∞,
L = 100 mH
400 — — V IC = 8 A, IB1 = 1.6 A,
I
= –0.8 A, VBE = –5 V,
B2
L = 180 µH, Clamped
7——VI
= 10 mA, IC = 0
E
——50µAVCB = 400 V, IE = 0
——50µAVCE = 350 V, RBE = ∞
15 — — VCE = 5 V, IC = 4 A*
7—— V
= 5 V, IC = 8 A*
CE
— — 1.0 V IC = 4 A, IB = 0.8 A*
— — 1.5 V
— — 0.8 µsI
= 8 A, IB1 = –IB2 = 1.6 A,
C
— — 2.0 µsVCC ≅ 150 V
— — 0.8 µs
1
1
1
Maximum Collector Dissipation Curve
60
(W)
C
40
20
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
100
Area of Safe Operation
I
C(peak)
I
(Continuous)
C(max)
10
(A)
C
DC Operation (T
1.0
Ta = 25°C, 1 Shot
0.1
Collector current I
0.01
13 3010 100
Collector to emitter voltage V
50 µs
250 µs
PW = 10 ms
1 ms
C
= 25°C)
25 µs
300 1,000
(V)
CE
2
2SC2898
Collector Current Derating Rate
100
80
IS/B Limit Area
60
40
20
Collector current derating rate (%)
0 50 100 150
Case temperature T
Reverse Bias Area of Safe Operation
20
16
(A)
C
12
(°C)
C
300 V, 16 A
Transient Thermal Resistance
10
3
(°C/W)
j-c
1.0
10 ms–10 s
0.3
Thermal resistence θ
0.1
0.03
10 µs–10 ms
TC = 25°C
0.01
0.1 1.00.01
10 (s)
10 (ms)0.1 1.00.01
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
(V)
(BR)CER
IC = 1 mA
500
8
Collector current I
4
I
= –0.8 A
B2
Collector to emitter voltage V
200 500
100 300 4000
400 V,
8 A
450 V,
1.5 A
(V)
CE
400
Collector to emitter voltage V
300
1 k 10 k 100 k 1 M100
Base to emitter resistance R
BE
(Ω)
3
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