HIT 2SC2856, 2SC2855 Datasheet
2SC2855, 2SC2856
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA1190 and 2SA1191
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2855, 2SC2856
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC2855 2SC2856 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
90 120 V
90 120 V
55V
100 100 mA
–100 –100 mA
400 400 mW
2
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855 2SC2856
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter saturation
voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure NF — 0.15 1.5 — 0.15 1.5 dB VCE = 6 V, IC = 0.1 mA,
Noise voltage referred to
input
Notes: 1. The 2SC2855 and 2SC2856 are grouped by hFE as follows.
2. Pulse test
DE
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
T
90 — — 120 — — V IC = 10 µA, IE = 0
90 — — 120 — — V IC = 1 mA, RBE = ∞
5 ——5 ——V IE = 10 µA, IC = 0
— — 0.1 — — 0.1 µAVCB = 70 V, IE = 0
— — 0.1 — — 0.1 µAVEB = 2 V, IC = 0
1
250 — 800 250 — 800 VCE = 12 V, IC = 2 mA*
— 0.05 0.10 — 0.05 0.10 V IC = 10 mA, IB = 1 mA*
— 0.7 1.0 — 0.7 1.0 V
— 310 — — 310 — MHz VCE = 6 V, IC = 10 mA
Cob — 3 — — 3 — pF VCB = 10 V, IE = 0,
f = 1 MHz
R
= 10 kΩ, f = 1 kHz
g
— 0.2 2.0 — 0.2 2.0 dB VCE = 6 V, IC = 0.1 mA,
R
= 10 kΩ, f = 10 Hz
g
e
n
— 0.7 — — 0.7 — nV/√Hz VCE = 6 V, IC = 10 mA,
R
= 0, f = 1 kHz
g
2
2
3
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