HIT 2SC2854, 2SC2853 Datasheet
2SC2853, 2SC2854
Silicon NPN Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SA1188 and 2SA1189
Outline
2SC2853, 2SC2854
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC2853 2SC2854 Unit
Collector to base voltage V
CBO
90 120 V
Collector to emitter voltage V
CEO
90 120 V
Emitter to base voltage V
EBO
5 5 V
Collector current I
C
100 100 mA
Emitter current I
E
–100 –100 mA
Collector power dissipation P
C
400 400 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SC2853 2SC2854
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter saturation
voltage
Gain bandwidth product f
Collector output capacitance Cob — 3 — — 3 — pF VCB = 10 V, IE = 0,
Notes: 1. The 2SC2853 and 2SC2854 are grouped by hFE as follows.
2. Pulse test
D E
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
T
90 — — 120 — — V IC = 10 µA, IE = 0
90 — — 120 — — V IC = 1 mA, RBE = ∞
5 — — 5 — — V IE = 10 µA, IC = 0
— — 0.1 — — 0.1 µA VCB = 70 V, IE = 0
— — 0.1 — — 0.1 µA VEB = 2 V, IC = 0
1
250 — 800 250 — 800 VCE = 12 V, IC = 2 mA*
— 0.05 0.10 — 0.05 0.10 V IC = 10 mA, IB = 1 mA*
— 0.7 1.0 — 0.7 1.0 V
— 310 — — 310 — MHz VCE = 6 V, IC = 10 mA
f = 1 MHz
2
2
See characteristic curves of 2SC2855 and 2SC2856.
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