HIT 2SC2816 Datasheet
2SC2816
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Base current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
500 V
400 V
7V
5A
10 A
2.5 A
40 W
2SC2816
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Storage time t
Fall time t
Note: 1. Pulse test.
V
CEO(sus)
V
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 — — V IC = 0.2 A, RBE = , L = 100
mH
400 — — V IC = 5 A, IB1 = –IB2 = 1.0 A
V
= –5.0 V, L = 180 µH,
BE
Clamped
7——VI
= 10 mA, IC = 0
E
— — 50 µA VCB = 400 V, IE = 0
— — 50 µA VCE = 350 V, RBE =
15 — — VCE = 5.0 V, IC = 2.5 A*
7—— V
= 5.0 V, IC = 5 A*
CE
— — 1.0 V IC = 2.5 A, IB = 0.5 A*
— — 1.5 V IC = 2.5 A, IB = 0.5 A*
— — 0.5 µs IC = 5 A, IB1 = –IB2 = 1.0 A,
— — 1.5 µs VCC ≅ 150 V
— 0.3 0.5 µs
1
1
1
1
Maximum Collector Dissipation Curve
60
(W)
C
40
20
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
100
Area of Safe Operation
i
C(peak)
10
I
(A)
C
(Continuous)
C(max)
DC Operation (T
1.0
Ta = 25°C, 1 Shot
0.1
Collector current I
0.01
13 3010 100
Collector to emitter voltage V
50
250 µs
PW = 10 ms
1 ms
C
= 25°C)
25 µs
µs
300 1,000
(V)
CE
2
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