HIT 2SC2776 Datasheet

Application
VHF amplifier
Mixer, Local oscillator
MPAK
2SC2776
Silicon NPN Epitaxial Planar
ADE-208-1077 (Z)
1st. Edition
Mar. 2001
3
1
2
1. Emitter
2. Base
3. Collector
2SC2776
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I
CBO
DC current transfer ratio hFE* Collector to emitter saturation
V
CE(sat)
voltage Collector output capacitance Cob 1.1 pF VCB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product f
T
Noise figure NF 5.5 dB VCE = 6 V, IC = 1 mA,
Power gain PG 17 dB VCE = 6 V, IC = 1 mA,
Note: 1. The 2SC2776 is grouped by hFE as follows.
Grade A B C
Mark VA VB VC h
FE
35 to 70 60 to 120 100 to 200
30 V IC = 10 µA, IE = 0
20 V IC = 1 mA, RBE =
4——VI
0.5 µAV
1
35 200 V — 0.8 1.2 V IC = 10 mA, IB = 1 mA
320 MHz VCE = 6 V, IC = 1 mA
30 V 20 V 4V 30 mA 100 mW
= 10 µA, IC = 0
E
= 10 V, IE = 0
CB
= 6 V, IC = 1 mA
CE
f = 100 MHz, R
f = 100 MHz, R R
= 550 , Unneutralized
L
= 50
g
= 100 ,
g
2
2SC2776
Maximum Collector Dissipation Curve
150
(mW)
C
100
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
5
4
(mA)
C
3
50
40
30
20
2
Typical Output Characteristics (1)
20
200
240
180
160
140
120
100
(mA)
C
16
12
80
8
60
PC = 100 mW
40
Collector Current I
4
20 µA IB = 0
15010050
0
41220816
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics (1)
20
16
(mA)
C
VCE = 6 V
12
8
1
Collector Current I
0
41220816
Collector to Emitter Voltage V
10 µA
IB = 0
CE
(V)
4
Collector Current I
0
0.60 0.64 0.68 0.72 0.76 0.80 Base to Emitter Voltage V
BE
(V)
3
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