Application
• UHF/VHF frequency converter
• Local oscillator
Outline
2SC2736
Silicon NPN Epitaxial
2SC2736
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
30 V
Collector to emitter voltage V
CEO
20 V
Emitter to base voltage V
EBO
3 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Collector to emitter saturation
voltage
DC current transfer ratio h
Collector output capacitance Cob — — 1.0 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Conversion gain CG
Noise figure NF — 4.0 — dB VCC = 12 V, IC = 2 mA,
Oscillating output voltage V
Note: Marking is “TC”.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
V
CE(sat)
FE
T
CG
OSC1
V
OSC2
30 — — V IC = 10 µA, IE = 0
20 — — V IC = 1 mA, RBE = ∞
3 — — V IE = 10 µA, IC = 0
— — 500 nA V
= 15 V, IC = 0
CB
— — 0.7 V IC = 10 mA, IB = 5 mA
30 — 200 V
= 10 V, IC = 5 mA
CE
1400 2200 — MHz VCE = 10 V, IC = 5 mA
— 22.5 — dB VCC = 12 V, IC = 2 mA,
1
f = 200 MHz,
f
= 230 MHz (0dBm)
OSC
— 10 — dB VCC = 12 V, IC = 2 mA,
2
f = 900 MHz,
f
= 930 MHz (0dBm),
OSC
f
= 30 MHz
Out
f = 200 MHz,
f
= 230 MHz (0dBm)
OSC
— 300 — mV VCC = 12 V, IC = 7 mA,
f
= 300 MHz
OSC
— 200 — mV VCC = 12 V, IC = 7 mA,
f
= 930 MHz
OSC