HIT 2SC2734 Datasheet
Silicon NPN Epitaxial
Application
• UHF frequency converter
• Local oscillator, wide band amplifier
Outline
2SC2734
2SC2734
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
20 V
Collector to emitter voltage V
CEO
11 V
Emitter to base voltage V
EBO
3 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Collector to emitter saturation
voltage
DC current transfer ratio h
Gain bandwidth product f
Collector output capacitance Cob — 0.9 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain CG — 15 — dB VCC = 6 V, IC = 2 mA,
Noise figure NF — 9 — dB VCC = 6 V, IC = 2 mA,
Oscillating output voltage V
Note: Marking is “GC”.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
V
CE(sat)
FE
T
OSC
20 — — V IC = 10 µA, IE = 0
11 — — V IC = 1 mA, RBE = ∞
3 — — V IE = 10 µA, IC = 0
— — 0.5 µA V
= 10 V, IE = 0
CB
— — 0.7 V IC = 10 mA, IB = 5 mA
20 90 200 V
= 10 V, IC = 5 mA
CE
1.4 3.5 — GHz VCE = 10 V, IC = 10 mA
f = 900 MHz,
f
= 930 MHz (0dBm),
OSC
f
= 30 MHz
out
f = 900 MHz,
f
= 930 MHz (0dBm),
OSC
f
= 30 MHz
out
— 140 — mV VCC = 6 V, IC = 5 mA,
f = 930 MHz
2SC2734
3
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