HIT 2SC2732 Datasheet
Application
UHF frequency converter
Outline
2SC2732
Silicon NPN Epitaxial
2SC2732
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
30 V
Collector to emitter voltage V
CEO
25 V
Emitter to base voltage V
EBO
4 V
Collector current I
C
20 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Collector to emitter saturation
voltage
DC current transfer ratio h
Gain bandwidth product f
Collector output capacitance Cob — 0.5 0.8 pF VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain CG — 7.0 — dB VCC = 12 V, IC = 1 mA,
Noise figure NF — 10.0 — dB VCC = 12 V, IC = 1 mA,
Note: Marking is “EC”.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
V
CE(sat)
FE
T
30 — — V IC = 10 µA, IE = 0
25 — — V IC = 1 mA, RBE = ∞
4 — — V IE = 10 µA, IC = 0
— — 0.5 µA V
= 10 V, IC = 0
CB
— — 5 V IC = 10 mA, IB = 1 mA
30 60 — V
= 10 V, IC = 3 mA
CE
700 1000 — MHz VCE = 10 V, IC = 5 mA
f = 900 MHz,
f
= 930 MHz (0dBm) ,
OSC
f
= 30 MHz
out
f = 900 MHz,
f
= 930 MHz (0dBm) ,
OSC
f
= 30 MHz
out
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