HIT 2SC2618 Datasheet
Silicon NPN Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SA1121
Outline
MPAK
2SC2618
3
1
2
1. Emitter
2. Base
3. Collector
2SC2618
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
CBO
h
V
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
BE
Note: 1. The 2SC2618 is grouped by h
Grade B C D
Mark RB RC RD
h
FE1
60 to 120 100 to 200 160 to 320
35 — — V IC = 10 µA, IE = 0
35 — — V IC = 1 mA, RBE = ∞
4——VI
— — 0.5 µAV
1
*
60 — 320 V
10 — — V
— 0.2 0.6 V IC = 150 mA, IB = 15 mA
— 0.64 — V V
as follows.
FE1
35 V
35 V
4V
500 mA
150 mW
= 10 µA, IC = 0
E
= 20 V, IC = 0
CB
= 3 V, IC = 10 mA
CE
(Pulse test)
= 3 V, IC = 500 mA
CE
(Pulse test)
(Pulse test)
= 3 V, IC = 10 mA
CE
(Pulse test)
See characteristic curves of 2SC1213.
2
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