HIT 2SC2611 Datasheet

Silicon NPN Triple Diffused
Application
High voltage amplifier TV VIDEO output
Outline
2SC2611
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
CBO
CEO
EBO
C
C
300 V 300 V 5V 100 mA
1.25 W
2SC2611
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I DC current transfer ratio h Collector to emitter saturation
V
CEO
FE
CE(sat)
voltage Gain bandwidth product f
T
Collector output capacitance Cob 4.0 pF VCB = 20 V, IE = 0, f = 1 MHz
300 V IC = 10 µA, IE = 0
300 V IC = 1 mA, RBE =
5——VI
= 10 µA, IC = 0
E
1.0 µAVCE = 250 V, RBE = 30 200 VCE = 20 V, IC = 20 mA — 1.5 V IC = 20 mA, IB = 2 mA
50 80 MHz VCE = 20 V, IC = 20 mA
Maximum Collector Dissipation Curve
1.5
1.0
0.5
Collector power dissipation Pc (W)
0 50 100 150
Ambient Temperature T
(°C)
C
Typical Output Characteristics
1.0
0.8
(mA)
C
0.6
0.4
0.2
Collector Current I
0
0.4 0.8 1.2 1.6 2.0
Collector to emitter Voltage V
IB = 0
16
14 12
10
8 6 4
2 µA
CE
(V)
2
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