HIT 2SC2547, 2SC2546, 2SC2545 Datasheet
2SC2545, 2SC2546, 2SC2547
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA1083, 2SA1084 and 2SA1085
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2545, 2SC2546, 2SC2547
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC2545 2SC2546 2SC2547 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
60 90 120 V
60 90 120 V
555V
100 100 100 mA
–100 –100 –100 mA
400 400 400 mW
2
2SC2545, 2SC2546, 2SC2547
Electrical Characteristics (Ta = 25°C)
2SC2545 2SC2546 2SC2547
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Noise voltage referred
input
Note: 1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by hFE as follows.
2SC2545, 2SC2546 250 to 500 400 to 800 600 to 1200
2SC2547 250 to 500 400 to 800 —
V
V
60 — — 90 — — 120 — — V IC = 10 µA, IE = 0
(BR)CBO
60 — — 90 — — 120 — — V IC = 1 mA,
(BR)CEO
RBE = ∞
V
CBO
EBO
5——5——5——VIE = 10 µA, IC = 0
(BR)EBO
— — 0.1 — — 0.1 — — 0.1 µAVCB = 50 V, IE = 0
— — 0.1 — — 0.1 — — 0.1 µAVEB = 2 V, IC = 0
1
*
250 — 1200 250 — 1200 250 — 800 VCE = 12 V,
FE
IC = 2 mA
V
— — 0.2 — — 0.2 — — 0.2 V IC = 10 mA,
CE(sat)
IB = 1 mA
— 0.6 — — 0.6 — — 0.6 — V VCE = 12 V,
BE
IC = 2 mA
T
—90— —90— —90— MHzVCE = 12 V,
IC = 2 mA
Cob — 3.0 — — 3.0 — — 3.0 — pF VCB = 10 V, IE = 0,
f = 1 MHz
e
— 0.5 — — 0.5 — — 0.5 — nV/
n
√Hz
VCE = 6V,
IC = 10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
DEF
3
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