HIT 2SC2396, 2SC2544, 2SC2543 Datasheet
2SC2396, 2SC2543, 2SC2544
Silicon NPN Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SA1025, 2SA1081 and 2SA1082
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2396, 2SC2543, 2SC2544
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC2396 2SC2543 2SC2544 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SC2396 2SC2543 2SC2544
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by h
2SC2396, 2SC2543 250 to 500 400 to 800 600 to 1200
2SC2544 250 to 500 400 to 800 —
V
V
V
CBO
EBO
V
T
60 — — 90 — — 120 — — V IC = 10 µA, IE = 0
(BR)CBO
60 — — 90 — — 120 — — V IC = 1 mA,
(BR)CEO
5——5——5——VIE = 10 µA, IC = 0
(BR)EBO
— — 0.1 — — 0.1 — — 0.1 µAVCB = 50 V, IE = 0
— — 0.1 — — 0.1 — — 0.1 µAVEB = 2 V, IC = 0
1
250 — 1200 250 — 1200 250 — 800 VCE = 12 V,
— — 0.2 — — 0.2 — — 0.2 V IC = 10 mA,
CE(sat)
— 0.6 — — 0.6 — — 0.6 — V VCE = 12 V,
BE
—90— —90— —90— MHzVCE = 12 V,
Cob — 3.0 — — 3.0 — — 3.0 — pF VCB = 10 V, IE = 0,
DEF
60 90 120 V
60 90 120 V
555V
100 100 100 mA
–100 –100 –100 mA
400 400 400 mW
RBE = ∞
IC = 2 mA
IB = 1 mA
IC = 2 mA
IC = 2 mA
f = 1 MHz
as follows.
FE1
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
2
Loading...