Fairchild Semiconductor MMBT3906, PZT3906 Datasheet
2N3906 / MMBT3906 / PZT3906
2N3906
C
B
E
TO-92
PZT3906
C
E
C
SOT-223
PNP General Purpose Amplifier
B
MMBT3906
C
SOT-23
Mark: 2A
B
E
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
C
°
(BR)
(BR)
(BR)
)
)
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
BL
I
CEX
ON CHARACTERISTICS
h
FE
V
CE(sat
V
BE(sat
Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Base Cutoff Current VCE = 30 V, V
= 3.0 V 50 nA
BE
40 V
5.0 V
Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
DC Current Gain * IC = 0.1 mA, VCE = 1.0 V
I
= 1.0 mA, VCE = 1.0 V
C
I
= 10 mA, VCE = 1.0 V
C
I
= 50 mA, VCE = 1.0 V
C
I
= 100 mA, VCE = 1.0 V
C
Collector-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA
I
= 50 mA, IB = 5.0 mA
C
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
I
= 50 mA, IB = 5.0 mA
C
60
80
100
300
60
30
0.25
0.4
0.65 0.85
0.95
V
V
V
V
2N3906 / MMBT3906 / PZT3906
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure
Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz
Output Capacitance VCB = 5.0 V, IE = 0,
f = 100 kHz
Input Capacitance VEB = 0.5 V, IC = 0,
f = 100 kHz
(except MMPQ3906)
IC = 100 µA, VCE = 5.0 V,
=1.0kΩ, f=10 Hz to 15.7 kHz
R
S
250 MHz
4.5 pF
10.0 pF
4.0 dB
SWITCHING CHARACTERISTICS (except MMPQ3906)
t
d
t
r
t
s
t
f
Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
Storage Time VCC = 3.0 V, IC = 10mA 225 ns
Fall Time IB1 = IB2 = 1.0 mA 75 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
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