Fairchild Semiconductor MMBT3904 Datasheet

2N3904 MMBT3904

C

B

E

TO-92

SOT-23

Mark: 1A

PZT3904

2N3904 / MMBT3904 / PZT3904

E

B

C

E

C

B

SOT-223

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage 40 V Collector-Base Voltage 60 V Emitter-Base Voltage 6.0 V Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150

°

C

 1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

(BR)

)

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

V

EBO

I

BL

I

CEX

ON CHARACTERISTICS*

h

FE

V

CE(sat

V

BE(sat

Collector-Emitte r Breakdown Voltage IC = 1.0 mA, IB = 0 40 V Collector-Base Breakdown Voltag e Emitter-Base Breakdown Voltage

I

= 10 µA, IE = 0

C

I

= 10 µA, IC = 0

E

Base Cutoff Current VCE = 30 V, V

= 0 50 nA

EB

60 V

6.0 V

Collector Cutoff Current VCE = 30 V, VEB = 0 50 nA

DC Current Gain IC = 0.1 mA, VCE = 1.0 V

I

= 1.0 mA, VCE = 1.0 V

C

I

= 10 mA, VCE = 1.0 V

C

I

= 50 mA, VCE = 1.0 V

C

I

= 100 mA, VCE = 1.0 V

C

Collector-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA

= 50 mA, IB = 5.0 mA

I

C

Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

I

= 50 mA, IB = 5.0 mA

C

40 70

100

300 60 30

0.2

0.3

0.65 0.85

0.95

V V V V

2N3904 / MMBT3904 / PZT3904

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

NF Noise Figure

Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

f = 100 MHz

Output Capacitance VCB = 5.0 V, IE = 0,

f = 1.0 MHz

Input Capacitance VEB = 0.5 V, IC = 0,

f = 1.0 MHz

(except MMPQ3904)

IC = 100 µA, VCE = 5.0 V,

=1.0kΩ, f=10 Hz to 15.7 kHz

R

S

300 MHz

4.0 pF

8.0 pF

5.0 dB

SWITCHING CHARACTERISTICS (except MMPQ3904)

t

d

t

r

t

s

t

f

Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns Storage Time VCC = 3.0 V, IC = 10mA 200 ns Fall Time IB1 = IB2 = 1.0 mA 50 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)

NPN General Purpose Amplifier

(continued)

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N3904 *PZT3904

P

D

R

θ

JC

R

θ

JA

Symbol Characteristic Max Units

P

D

R

θ

JA

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Total Device Dissipa tion

Derate above 25°C

625

5.0

1,000

8.0

Ther mal Resistance, Junction to Case 83.3 Thermal Resistance, Junction to Ambient 200 125

**MMBT3904 MMPQ3904

Total Device Dissipa tion

Derate above 25°C

Thermal Resistan ce, Junction to Ambient

Effective 4 Di e Each Die

350

2.8

357

1,000

8.0

125 240

2

.

mW

mW/°C

C/W

°

C/W

°

mW

mW/°C

C/W

°

C/W

°

C/W

°

2N3904 / MMBT3904 / PZT3904

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

500

400

300

200

100

0

0.1 1 10 100

FE

h - TYPICAL PULSED CURRENT GAIN

1

0.8

0.6

0.4

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 100

125 °C

25 °C

- 40º C

I - COLLECTOR CURRENT (mA)

C

Base-Emitter Saturation

Voltage vs Collector Current

β = 10

- 40 °C

25 °C

125 °C

I - COLLECTOR CURRENT (mA)

C

V = 5V

CE

Collector-Emi tter Saturation

Voltage vs Collector Cu rren t

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

0.15

0.1

0.05

= 10

β

125 °C

25 °C

- 40 °C

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Base-Emitter ON Voltage vs

Collector Current

1

V = 5V

CE

0.8

0.6

0.4

0.2

0.1 1 10 100

BE(ON)

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C

I - COLLECTOR CURRENT (mA )

C

25 °C

125 °C