Fairchild Semiconductor MMBT3646 Datasheet
Switching Transistor
MMBT3646
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
MMBT3646
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CES
V
CBO
V
EBO
I
C
P
D
T
, T
J
STG
Electrical Characteristics
Collector-Emitter Voltage 15 V
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 5
Collector Current (DC) - Continuous 300 mA
Total Device Dissipation
- Derate above 25°C
@ TA=25°C 625
5
Operating and Storage Junction Temperature Range 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Min. Typ. Max. Units
Off Characteristics
V
(BR)CES
V
CEO(
V
(BR)CBO
V
(BR)EBO
I
CES
SUS
Collector-Emitter Breakdown Voltage (IC = 100µAdc, VBE = 0) 40 V
Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0) 15 V
)
Collector-Base Breakdown Voltage (IC = 100µAdc, IE = 0) 40 V
Emitter-Base Breakdown Voltage (IE = 100µAdc, IC = 0) 5 V
Collector Cut-off Current (VCE = 20Vdc, VBE = 0)
(V
= 20Vdc, VBE = 0, TA = 65°C)
CE
0.53µA
On Characteristics (1)
h
FE
V
CE(sat)
V
BE(sat)
DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc)
= 100mAdc, VCE = 0.5Vdc)
(I
C
= 300mAdc, VCE = 1Vdc)
(I
C
Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(I
= 100mAdc, IB = 10mAdc)
C
= 300mAdc, IB = 30mAdc)
(I
C
(I
= 30mA, IB = 3mA, TA =65°C)
C
Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
= 100mAdc, IB = 10mAdc)
(I
C
= 300mAdc, IB = 30mAdc)
(I
C
30
25
15
0.73 0.95
120
0.2
0.28
0.5
0.3
1.2
1.7
mW
mW/°C
V
V
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
MMBT3646
Electrical Characteristics T
=25°C unless otherwise noted) (Continued)
C
Symbol Parameter Min. Typ. Max. Units
Small-Signal Characteristics
C
obo
C
ibo
Output Capacitance
= 5Vdc, IE = 0, f = 1MHz)
(V
CE
Input Capacitance
(V
= 0.5Vdc, IC = 0, f = 1MHz)
EB
Switching Characteristics
t
on
t
d
t
r
t
off
t
f
t
s
Turn-On Time VCC = 10Vdc, IC = 300mAdc,
= 30mAdc, V
I
Delay Time 10 ns
B1
CE(off)
= 3V
Rise Time 15 ns
Turn-Off Time VCC = 10Vdc, IC = 300mAdc,
= IB2 = 30mAdc
I
Fall Time 15 ns
B1
Storge Time 20 ns
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units
R
θJA
R
θJC
Thermal Resistance, Junction to Ambient 200
Thermal Resistance, Junction to Case 83.3
5pF
8pF
18 ns
28 ns
°
C
°
C
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
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