Fairchild Semiconductor MMBT3640, PN3640 Datasheet

PN3640 MMBT3640

C

B

E

PNP Switching Transistor

This device is designed for very high speed saturate switching at
collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.

TO-92

C

SOT-23

Mark: 2J

PN3640 / MMBT3640

Discrete POWER & Signal

Technologies

E

B

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

Collector-Emitter Voltage 12 V
Collector-Base Voltage 12 V
Em i t ter - Bas e V oltage 4. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

PN3640 *MMBT3640

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Total De vice Dissip at i on

Derate above 25°C

Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556 °C/W

350

2.8

225

1.8

mW

mW/°C

°C/W

 1997 Fairchild Semiconductor Corporation

PNP Switching Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CES

I

B

ON CHARACTERISTICS*

h

FE

V

sat

CE(

V

sat

BE(

Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 012V
Collector-Emitter Breakdown Voltage IC = 100 µA, VBE = 0 12 V
C oll ec tor -Base Br eak down Volt age
Em i t ter - Bas e B r e akdown Voltage IE = 100 µA, I

= 100 µA, IE = 0

I

C

= 0 4.0 V

C

Colle c tor Cu tof f Cu rr ent VCE = 6.0 V, VBE = 0

= 6.0 V, VBE = 0, T

V

CE

= 65°C

A

12 V

0.01

1.0

µ
µ

Base Current VCE = 6.0 V, VBE = 0 10 nA

DC Cu r rent Gain IC = 10 mA, VCE = 0.3 V

= 50 mA, VCE = 1.0 V

I

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA

)

C

= 10 mA, IB = 1.0 mA

I

C

IC = 50 mA, IB = 5.0 mA
IC= 10 mA, IB= 1.0 m A, TA =65°C

Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA

)

IC = 10 mA, IB = 1.0 mA

= 50 mA, IB = 5.0 mA

I

C

30
20

0.75

0.8

120

0.3

0.2

0.6

0.25

0.95

1.0

1.5

V
V
V
V
V
V
V

PN3640 / MMBT3640

A
A

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
Output Capacitance VCB = 5.0 V, IE = 0,
Input Capacitance VBE = 0.5 V, IC = 0,

SWITCHING CHARACTERISTICS

t

d

t

r

t

s

t

f

t

on

t

off

Delay Time
Rise Time IC = 50 mA, IB1 = 5.0 mA 20 ns
St or age Tim e VCC = 6.0 V, IC = 50 mA, 20 ns
Fall Time IB1 = IB2 = 5.0 mA 12 ns
Turn-On Time

Turn-Off Time

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

f = 10 0 M Hz

500 MHz

3.5 pF

f = 1. 0 MHz

3.5 pF

f = 1. 0 MHz

VCC = 6.0 V, V

VCC = 6.0 V, V

BE(

BE(

= 1.9 V,

)

off

= 1.9 V,

off

)

10 ns

25 ns

IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA, 60 ns

IB1 = IB2 = 0.5 mA
VCC = 6.0 V, V

BE(

= 1.9 V,

off

)

35 ns

IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA, 75 ns

IB1 = IB2 = 0.5 mA