Fairchild Semiconductor MMBT2484, PN2484 Datasheet
PN2484 MMBT2484
C
B
E
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µ to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
TO-92
C
SOT-23
Mark: 1U
PN2484 / MMBT2484
Discrete POWER & Signal
Technologies
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristi c Max Units
PN2484 *MMBT2484
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200 357
625
5.0
350
2.8
mW
mW/°C
C/W
°C/W
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
IC = 10 µA, IB = 0
IC = 10 mA, IE = 0 60 V
60 V
Voltage*
Emitter-Base Breakdown Voltage
= 10 µA, IE = 0
I
C
5.0 V
Collector Cutoff Current VCB = 45 V, IE = 0
= 45 V, IE = 0, TA = 150°C
V
CB
Emitter Cutoff Current VEB = 5.0 V, IC = 0 10 nA
DC Current Gain IC = 1.0 mA, VCE = 5.0 V
= 10 mA, VCE = 5.0 V*
I
Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA 0.35 V
)
C
250
Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.95 V
10
10
800
nA
µ
A
PN2484 / MMBT2484
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
NF Noise Figure
Output Capacitance V
Input Capacitance VEB = 0.5 V, f = 140 kHz 6.0 pF
*Pulse Test: Pulse W idth ≤ 300 µs, Duty Cycle ≤ 3.0%
=5.0 V, f = 140 kHz 6.0 pF
CB
= 10 µA, VCE = 5.0 V,
I
C
3.0 dB
RS = 10k,f = 1.0 kHz,BW =200 Hz
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