Fairchild Semiconductor MMBD1401, MMBD1404, MMBD1403, MMBD1405 Datasheet
Discrete POWER & Signal
Technologies
MMBD1401 / 1403 / 1404 / 1405
MMBD1401 / 1403 / 1404 / 1405
CONNECTION DIAGRAMS
1401
1404
3
2 NC
1
3
21
3
1403
21
3
1405
21
3
SOT-23
3
29
12
2
1
MMBD1401 29 MMBD1404 33
MMBD1403 32 MMBD1405 34
MARKING
High Voltage General Purpose Diode
Sourced from Process 1H.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inverse Voltage 175 V
Average Rectified Current 200 mA
DC Forward Current 600 mA
Recurren t Peak Forward Curren t 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
1.0
2.0
A
A
°
°
C
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD1401/1403/1404/1405*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
Total Device Dissipati on
Derate above 25°C
350
2.8
Thermal Resistan ce, Junction to Ambient 357
mW
mW/°C
C/W
°
High Voltage General Purpoise Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Breakdown Voltage
I
= 100 µA
R
Reverse Cu rrent VR = 120 V
V
= 175 V
R
Forward Voltage IF = 10 mA
I
= 50 mA
F
I
= 200 mA
F
I
= 300 mA
F
200 V
40
100
760
800
920
mV
mV
1.0
1.1
nA
nA
Diode Capacitance VR = 0, f = 1.0 MHz 2.0 pF
Reverse Recovery Time IF = IR = 30 mA,
I
= 1.0 mA, RL = 100
RR
Ω
50 nS
V
V
Typical Characteristics
MMBD1401 / 1403 / 1404 / 1405
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
325
Ta= 25°C
300
R
R
V
V - REVERSE VOLTAGE (V)
275
3 5 10 20 30 50 100
I - REVERSE CURRENT (uA)
R
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
100
Ta= 25°C
90
80
70
60
50
40
30
20
R
R
I - REVERSE CURRENT (nA)
I
180 200 220 240
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten Degree C increase in Temperature
255
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 55 to 205 V
50
Ta= 25°C
40
30
20
10
0
R
I - REVERSE CURRENT (nA)
55 75 95 115 135 155 175 195
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
Ta= 25°C
450
400
350
300
250
F
F
V - FORWARD VOLTAGE (mV)
V
1 2 3 5 10 20 30 50 100
F
I - FORWARD CURRENT (uA)
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