Fairchild Semiconductor KA5H0280R, KA5H0265RC, KA5H02659RN, KA5M0265R, KA5M02659RN Datasheet

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KA5x02xx-SERIES
KA5H0265RC, KA5M0265R, KA5L0265R, KA5H02659RN/KA5M02659RN, KA5H0280R, KA5M0280R Fairchi ld Pow er Sw itch( FP S)
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current (Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Load Protection
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver , thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry­compared to discrete MOSFET and controller or R switching converter solution. The Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platf orm well suite d for cost-effe ctive design in either a flyback converter or a forward converter .
TO-220F-4L
1
1. GND
2. Drain
3. Vcc
4. FB
8-DIP TO220-5L
1
1.6.7.8. Drain
2. GND
3. Vcc
4. FB
5. NC
1
1. Drain
2. GND
3. Vcc
4. FB
5. S/S
CC
Internal Block Diagram
V
CC
32V
Soft Start
*
5V
uA
FB
* KA5H0265RC
©2003 Fairchild Semiconductor Corporation
µ
5
7.5V
27V
A
2.5R
1mA
1R
9V
+
+
Thermal S/D
OVER VOLTAGE S/D
OSC
+
5V
Vref
L.E.B
0.1V
Good
logic
S R
Internal
bias
Q
S R
Power on reset
SFET
Q
DRAIN
GND
Rev.1.0.4
KA5X02XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic Symbol Value Unit KA5x0265xRx
Drain-Gate Voltage (R Gate-Source (GND) Voltage V Drain Current Pulsed Continuous Drain Current (TC=25°C) I Continuous Drain Current (TC=100°C) I Single Pulsed Avalanche Energy Maximum Supply Voltage V Analog Input Voltage Range V
Total Power Dissipation Operating Junction Temperature. T
Operating Ambient Temperature. T Storage Temperature Range. T
KA5x0280R
Drain-Gate Voltage (R Gate-Source (GND) Voltage V Drain Current Pulsed Continuous Drain Current (TC=25°C) I Continuous Drain Current (TC=100°C) I Single Pulsed Avalanche Energy Maximum Supply Voltage V Analog Input Voltage Range V
Total Power Dissipation Operating Junction Temperature. T
Operating Ambient Temperature. T Storage Temperature Range. T
=1M)V
GS
(1)
(2)
DGR
GS
I
DM
D D
E
AS
CC,MAX
FB
P
D
Darting 0.33 W/°C
J A
STG
=1M)V
GS
(1)
(2)
DGR
GS
I
DM
D D
E
AS
CC,MAX
FB
P
D
Darting 0.28 W/°C
J A
STG
650 V ±30 V
8.0 A
2.0 A
1.3 A 68 mJ 30 V
-0.3 to V
SD
42 W
+160 °C
-25 to +85 °C
-55 to +150 °C
800 V ±30 V
8.0 A
2.0 A
1.3 A 90 mJ 30 V
-0.3 to V
SD
35 W
+160 °C
-25 to +85 °C
-55 to +150 °C
DC DC DC
V
DC DC DC
V
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting T
= 25°C
j
2
KA5X02XX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit KA5x0265xRx
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance Forward Transconductance
(Note)
(Note)
DSS
DSS
R
DS(ON)
gfs VDS=50V, ID=0.5A 1.5 2.5 - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 17 ­Turn on Delay Time td(on) Rise Time tr - 15 ­Turn Off Delay Time td(off) - 55 ­Fall Time tf - 25 ­Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 3 ­Gate-Drain (Miller) Charge Qgd - 12 -
VGS=0V, ID=50µA 650 - - V VDS=Max. Rating, VGS=0V - - 50 µA
=0.8Max. Rating,
V
DS
V
=0V, TC=125°C
GS
- - 200 µA
VGS=10V, ID=0.5A - 5.0 6.0
- 550 -
=0V, VDS=25V,
V
GS
f=1MHz
V
DD
=0.5B V
DSS
, ID=1.0A
-20-
(MOSFET switching time is essentially independent of operating temperature)
V
=10V, ID=1.0A,
GS
V
DS
=0.5B V
(MOSFET
DSS
--35
switching time is essentially independent of operating temperature)
pFOutput Capacitance Coss - 38 -
nS
nC
KA5x0280R
Drain-Source Breakdown Voltage BV
DSS
VGS=0V, ID=50µA 800 - - V VDS=Max. Rating, VGS=0V - - 50 µA
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance Forward Transconductance
(Note)
(Note)
Input Capacitance Ciss
DSS
R
DS(ON)VGS
=0.8Max. Rating,
V
DS
V
=0V, TC=125°C
GS
- - 200 µA
=10V, ID=0.5A - 5.6 7.0
gfs VDS=50V, ID=0.5A 1.5 2.5 - S
- 250 -
=0V, VDS=25V,
V
GS
f=1MHz
Reverse Transfer Capacitance Crss - 25 ­Turn on Delay Time td(on) Rise Time tr - 28 ­Turn Off Delay Time td(off) - 77 ­Fall Time tf - 24 ­Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 15 ­Gate-Drain (Miller) Charge Qgd - 20 -
Note:
1. Pulse test: Pulse width 300µS, duty cycle 2%
2.
1
S
--- -=
R
V
=0.5B V
DD
DSS
, ID=1.0A (MOSFET switching time is essentially independent of operating temperature)
V
=10V, ID=1.0A,
GS
V
=0.5B V
DS
(MOSFET
DSS
switching time is essentially independent of operating temperature)
-21-
--60
pFOutput Capacitance Coss - 52 -
nS
nC
3
KA5X02XX-SERIES
Electrical Characteristics (Control Part)
(Continued)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION
Start Threshold Voltage V Stop Threshold Voltage V
START
STOP
VFB=GND 14 15 16 V VFB=GND 8.2 8.8 9.4 V
OSCILLATOR SECTION
Initial Accuracy F
Initial Accuracy F Initial Accuracy F
Frequency Change With Temperature
(2)
OSC
OSC OSC
F/T-25°C Ta +85°C-±5 ±10 %
Maximum Duty Cycle Dmax
KA5H0265xRx KA5H0280R
KA5M0265xRx KA5M0280R
90 100 110 kHz
61 67 73 kHz
KA5L0265R 45 50 55 kHz
KA5H0265xRx KA5H0280R
62 67 72 %
KA5M0265xRx
Maximum Duty Cycle Dmax
KA5M0280R
72 77 82 %
KA5L0265R
FEEDBACK SECTION
Feedback Source Current I Shutdown Feedback Voltage V
FB
SD
Shutdown Delay Current Idelay Ta=25°C, 5V ≤ Vfb ≤ V
Ta=25°C, 0V Vfb 3V 0.7 0.9 1.1 mA Vfb 6.5V 6.9 7.5 8.1 V
456µA
SD
SOFT START SECTION
Soft Start Voltage V Soft Start Current I
SS
SS
KA5H0265RC
4.7 5.0 5.3 V
0.8 1.0 1.2 mA
REFERENCE SECTION
Output Voltage
(1)
Temperature Stability
(1)(2)
Vref Ta=25°C 4.80 5.00 5.20 V
Vref/T-25°C ≤ Ta ≤ +85°C-0.30.6mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit I Peak Current Limit I
OVER
OVER
KA5x02659RN 0.79 0.9 1.01 A KA5x0265Rx
KA5x0280R
1.05 1.2 1.34 A
PROTECTION SECTION
Over Voltage Protection V Thermal Shutdown Temperature
(1)
OVP
T
SD
VCC 24V 25 27 29 V
- 140 160 - °C
TOTAL DEVICE SECTION
Start-up Current I Operating Supply Current
(Control Part Only)
START
I
OPR
VCC=14V - 100 170 µA V
28 - 7 12 mA
CC
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
KA5X02XX-SERIES
Fig.1 Operating Fre quen c y
1.2
1.15
1.1
1.05
Fosc
1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
Temperature [°C]
Figure 1. Operating Frequency
Fig.3 Operating Current
1.2
1.15
1.1
1.05
Iop
1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
1.15
1.05
Ifb
0.95
0.85
Fig.2 Feedbac k Source Curr en t
1.2
1.1
1
0.9
0.8
-25 0 25 50 75 100 125 150
Temperature [°C]
Figure 2. Feedback Source Current
Fig.4 Max Inductor Cur r ent
1
-25 0 25 50 75 100 125 150
Ipeak
I
over
1.1
1.05
0.95
0.9
0.85
0.8
Figure 3. Operating Supply Current
Fig. 5 S t ar t up Current
-25 0 25 50 75 100 125 150
Istart
1.5
1.3
1.1
0.9
0.7
0.5
Temperature [°C] Temperature [°C]
Figure 5. Start up Current
Figure 4. Peak Current Limit
Fig.6 Star t Threshold Voltage
1.15
1.1
1.05
Vstart
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure 6. Start Threshold Voltage
5
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