Fairchild Semiconductor KA5H0165RN, KA5H0165R, KA5M0165RN, KA5L0165RN, KA5L0165R Datasheet

www.fairchildsemi.com

KA5x0165Rxx-SERIES

KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN,
KA5H0165RVN
Fairchi ld Pow er Sw itch( FP S)

Features

• Precision Fixed Operating Frequency (100/67/50kHz )

• Low Start-up Current (Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Load Protection

• Over Voltage Protection (Min. 25V)

- except KA5H0165RVN

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry
compared to discrete MOSFET and controller or R
switching converter solution, The Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reli ab il it y. It is well suited for cost effective design of flyback
converters.

TO-220F-4L 8-DIP

1

1. GND

2. Drain

3. Vcc

4. FB

1

1.6.7.8. Drain

2. GND

3. Vcc

4. FB

5. NC

CC

Internal Block Diagram

V

CC

32V

uA

FB

©2003 Fairchild Semiconductor Corporation

5

µ

7.5V

27V

A

2.5R

1mA

1R

9V

+

−

+

−

Thermal S/D

OVER VOLTAGE S/D

Vref

OSC

−

+

5V

L.E.B

0.1V

Good

logic

S
R

Internal

bias

Q

S
R

Power on reset

DRAIN

SFET

Q

GND

Rev.1.0.5

KA5X0165RXX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit

Drain-Gate Voltage (R

=1MΩ)V

GS

Gate-Source (GND) Voltage V
Drain Current Pulsed

(1)

I
Continuous Drain Current (TC=25°C) I
Continuous Drain Current (TC=100°C) I
Single Pulsed Avalanche Energy
Maximum Supply Voltage V

(2)

E

CC,MAX

Analog Input Voltage Range V
Total Power Dissipation

Derating 0.32 W/°C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T

DGR

GS

DM

D
D

AS

FB

P

D

J
A

STG

650 V
±30 V

4.0 A

1.0 A

0.7 A
95 mJ
30 V

-0.3 to V

SD

40 W

+160 °C

-25 to +85 °C

-55 to +150 °C

DC
DC
DC

V

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L=24mH, starting Tj=25°C

2

KA5X0165RXX-SERIES

Electrical Characteristics (SFET Part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

rain-Source Breakdown Voltage

D

Z

ero Gate Voltage Drain Current

Static Drain-Source on Resistance
Forward Transconductance

(Note)

(Note)

Input Capacitance Ciss

Reverse Transfer Capacitance Crss - 10 ­Turn on Delay Time td(on)
Rise Time tr - 4 ­Turn Off Delay Time td(off) - 30 ­Fall Time tf - 10 ­Total Gate Charge

(Gate-Source+Gate-Drain)
Gate-Source Charge Qgs - 3 -

Gate-Drain (Miller) Charge Qgd - 9 -

BV

DSS

VGS=0V, ID=50µA 650 - - V
VDS=Max. Rating, VGS=0V - - 50 µA

I

DSS

R

DS(ON)VGS

V

=0.8Max. Rating,

DS

V

=0V, TC=125°C

GS

- - 200 µA

=10V, ID=0.5A - 8 10 Ω

gfs VDS=50V, ID=0.5A 0.5 - - S

- 250 -

V

=0V, VDS=25V,

GS

f=1MHz

V

DD

=0.5B V

DSS

, ID=1.0A

-12-

(MOSFET switching time is
essentially independent of
operating temperature)

V

=10V, ID=1.0A,

Qg

GS

V

DS

=0.5B V

(MOSFET

DSS

--21

switching time is essentially
independent of operating
temperature)

pFOutput Capacitance Coss - 25 -

nS

nC

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2.

1

S

--- -=

R

3

KA5X0165RXX-SERIES

Electrical Characteristics (Control Part)

(Continued)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION

Start Threshold Voltage V
Stop Threshold Voltage V

START

STOP

VFB=GND 14 15 16 V
VFB=GND 8.2 8.8 9.4 V

OSCILLATOR SECTION

Initial Accuracy F
Initial Accuracy F
Initial Accuracy F
Frequency Change With Temperature

(2)

OSC
OSC
OSC

∆F/∆T-25°C ≤ Ta ≤ +85°C-±5 ±10 %

KA5H0165Rxx 90 100 110 kHz
KA5M0165Rx 61 67 73 kHz
KA5L0165Rx 45 50 55 kHz

Maximum Duty Cycle Dmax KA5H0165Rxx 62 67 72 %
Maximum Duty Cycle Dmax

KA5M0165Rx
KA5L0165Rx

72 77 82 %

FEEDBACK SECTION

Feedback Source Current I
Shutdown Feedback Voltage V

FB

SD

Shutdown Delay Current Idelay Ta=25°C, 3V ≤ Vfb ≤ V

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA
Vfb ≥ 6.5V 6.9 7.5 8.1 V

456µA

SD

REFERENCE SECTION

Output Voltage

(1)

Temperature Stability

(1)(2)

Vref Ta=25°C 4.80 5.00 5.20 V

Vref/∆T-25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit I

OVER

Max. inductor current 0.53 0.6 0.67 A

PROTECTION SECTION

Thermal Shutdown Temperature
Over Voltage Protection V

(1)

T

SD

OVP

- 140 160 - °C

except KA5H0165RVN 25 27 29 V

TOTAL STANDBY CURRENT SECTION

Start-up Current I
Operating Supply Current

(Control Part Only)

START

I

OP

VCC=14V - 100 170 µA
V

≤ 28 - 7 12 mA

CC

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

4