Fairchild Semiconductor H21A3, H21A2, H21A1 Datasheet
+
E+
D
2
0.129 (3.3)
0.119 (3.0)
0.433 (11.0)
0.422 (10.7)
0.315 (8.0)
0.110 (2.8)
0.091 (2.3)
1
3
4
0.020 (0.51) (SQ)
0.472 (12.0)
0.457 (11.6)
0.249 (6.35)
0.243 (6.15)
0.39 (1.00)
0.34 (0.85)
0.125 (3.2)
0.119 (3.0)
Ø 0.133 (3.4)
Ø 0.126 (3.2)
(2X)
0.755 (19.2)
0.745 (18.9)
L
C
C
L
L
C
Optical
C
L
0.972 (24.7)
0.957 (24.3)
.295 (7.5)
.272 (6.9)
PIN 1 ANODE
PIN 2 CATHODE
PIN 3 COLLECTOR
PIN 4 EMITTER
.073 (1.85)
.133 (3.38)
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning
agents.
4. Soldering iron tip
1/16” (1.6mm) minimum from housing.
PACKAGE DIMENSIONS
FEATURES
• Opaque housing
• Low cost
• .035” apertures
• High I
C(ON)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-55 to +100 °C
Storage Temperature T
STG
-55 to +100 °C
Soldering Temperature (Iron)
(2,3 and 4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2 and 3)
T
SOL-F
260 for 10 sec °C
INPUT (EMITTER)
Continuous Forward Current
I
F
50 mA
Reverse Voltage V
R
6V
Power Dissipation
(1)
P
D
100 mW
OUTPUT (SENSOR)
Collector to Emitter Voltage
V
CEO
30 V
Emitter to Collector Voltage V
ECO
4.5 V
Collector Current I
C
20 mA
Power Dissipation(TC= 25°C)
(1)
P
D
150 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
H21A1 / H21A2 / H21A3
PHOTOTRANSISTOR
OPTICAL INTERRUPTER SWITCH
DESCRIPTION
The H21A1, H21A2 and H21A3 consist of a
gallium arsenide infrared emitting diode
coupled with a silicon phototransistor in a
plastic housing. The packaging system is
designed to optimize the mechanical
resolution, coupling efficiency, ambient light
rejection, cost and reliability. The gap in the
housing provides a means of interrupting the
signal with an opaque material, switching the
output from an “ON” to an “OFF” state.
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300290 5/02/01 1 OF 5 www.fairchildsemi.com
1
2
4
3
www.fairchildsemi.com 2 OF 5 5/02/01 DS300290
PARAMETER TEST CONDITIONS SYMBOL DEVICES MIN TYP MAX UNITS
INPUT (EMITTER)
Forward Voltage
I
F
= 60 mA V
F
All — — 1.7 V
Reverse Breakdown Voltage IR= 10 µAV
R
All
6.0 — — V
Reverse Leakage Current VR= 3 V I
R
All
— — 1.0 µA
OUTPUT (SENSOR)
Emitter to Collector Breakdown
I
F
= 100 µA, Ee = 0 BV
ECO
All 6.0 — — V
Collector to Emitter Breakdown IC= 1 mA, Ee = 0 BV
CEO
All
30 — — V
Collector to Emitter Leakage VCE= 25 V, Ee = 0 I
CEO
All
— — 100 nA
COUPLED
H21A1
0.15 — —
I
F
= 5 mA, VCE= 5 V
H21A2 0.30
——
H21A3 0.60
——
H21A1
1.0 — —
On-State Collector Current I
F
= 20 mA, VCE= 5 V I
C(ON)
H21A2
2.0 — — mA
H21A3
4.0 — —
H21A1
1.9 — —
I
F
= 30 mA, VCE= 5 V
H21A2
3.0 — —
H21A3
5.5 — —
Saturation Voltage
I
F
= 20 mA, IC= 1.8 mA
V
CE(SAT)
H21A2/3 — — 0.40 V
I
F
= 30 mA, IC= 1.8 mA H21A1 — — 0.40 V
Turn-On Time
IF= 30 mA, VCC= 5 V, RL= 2.5 KΩ
t
on
All
—8 —µs
Turn-Off Time
IF= 30 mA, VCC= 5 V, RL= 2.5 KΩ
t
off
All
—50 —µs
ELECTRICAL / OPTICAL CHARACTERISTICS (T
A
=25°C)(All measurements made under pulse condition)
H21A1 / H21A2 / H21A3
PHOTOTRANSISTOR
OPTICAL INTERRUPTER SWITCH
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