Fairchild Semiconductor BSS84, BSS110 Datasheet

May 1999

BSS84 / BSS110
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is designed to minimize on-state resistance, provide
rugged and reliable performance and fast switching. They
can be used, with a minimum of effort, in most applications
requiring up to 0.17A DC and can deliver pulsed currents up
to 0.68A. This product is particularly suited to low voltage
applications requiring a low current high side switch.

____________________________________________________________________________________________

BSS84: -0.13A, -50V. R
BSS110: -0.17A, -50V. R

= 10Ω @ VGS = -5V.

DS(ON)

= 10Ω @ VGS = -10V

DS(ON)

Voltage controlled p-channel small signal switch.
High density cell design for low R

DS(ON)

High saturation current.

G

.

S

D

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter BSS84 BSS110 Units

V
V

V
I

D

Drain-Source Voltage -50 V

DSS

Drain-Gate Voltage (RGS < 20 KΩ)

DGR

Gate-Source Voltage - Continuous ±20 V

GSS

-50 V

Drain Current - Continuous @ TA = 30/35oC -0.13 -0.17 A

- Pulsed @ TA = 25oC -0.52 -0.68

P
TJ,T
T

Maximum Power Dissipation TA = 25°C 0.36 0.63 W

D

Operating and Storage Temperature Range -55 to 150 °C

STG

Maximum lead temperature for soldering

L

purposes, 1/16" from case for 10 seconds

300 °C

THERMAL CHARACTERISTICS

R

© 1997 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient 350 200 °C/W

JA

θ

BSS84 Rev. C1 / BSS110. Rev. A2

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV
I

DSS

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA All -50 V
Zero Gate Voltage Drain Current VDS = -50 V,

V

= 0 V

GS

VDS = -25 V, V

TJ = 125°C -60 µA

= 0 V -0.1 µA

GS

All -15 µA

Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All -10 nA
ON CHARACTERISTICS (Note 1)
V
R

g

GS(th)

DS(ON)

FS

Gate Threshold Voltage VDS = VGS, ID = -1 mA All -0.8 -1.75 -2 V

Static Drain-Source On-Resistance VGS = -5V, ID = -0.10 A

VGS = -10 V, ID = -0.17 A

Forward Transconductance VDS = -25 V, ID = -0.10A

VDS = -10 V, ID = -0.17 A

BSS84

BSS110

BSS84

BSS110

3.2 10

2.2 10

0.05 0.27 S

0.05 0.29

Ω

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

Output Capacitance All 16 25 pF

Reverse Transfer Capacitance All 5 12 pF

BSS84

BSS110

37 45 pF
37 40

SWITCHING CHARACTERISTICS (Note 1)

t
t

t
t

D(on)

r

D(off)

f

Turn - On Delay Time VDD = -30 V, ID = -0.27 A,

Turn - On Rise Time All 50 nS

VGS = -10 V, R

GEN

= 50 Ω

All 12 nS

Turn - Off Delay Time All 10 nS

Turn - Off Fall Time All 25 nS

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

I

SM

V

SD

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Continuous Source Diode Current

Maximum Pulsed Source Diode Current (Note 1)

Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.26 A (Note 1)

VGS = 0 V, IS = -0.34 A (Note 1)

BSS84

BSS110

BSS84

BSS110

BSS84

BSS110

-0.13 A

-0.17

-0.52 A

-0.68

-0.95 -1.2 V

-1 -1.2

BSS84 Rev. C1 / BSS110. Rev. A2

Typical Electrical Characteristics

-1

V = -10V

GS

-0.8

-0.6

-0.4

-0.2

D

I , DRAIN-SOURCE CURRENT (A)

V , DRAIN-SOURCE VOLTAGE (V)

DS

-8.0

-6.0

-5.0

-4.5

-4.0

-3.5

-3.0

-2.5

-6-5-4-3-2-10

3

V = -3V

2.5

1.5

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5

GS

2

1

-3.5

-4.0

I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage

1.6

I = -0.13A

D

1.4

V = -10V

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

3

V = -10V

2.5

1.5

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5

GS

2

1

I , DRAIN CURRENT (A)

D

-4.5

T = 125°C

J

25°C

-5.0

-55°C

-6.0

-8.0

-10

-1-0.8-0.6-0.4-0.2

-1-0.8-0.6-0.4-0.2

Figure 3. On-Resistance Variation

with Temperature

-1

-0.8

-0.6

-0.4

D

I , DRAIN CURRENT (A)

-0.2

V = -10V

DS

T = -55°C

J

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics

25°C

125°C

Figure 4. On-Resistance Variation

with Drain Current and Temperature

1.1

1.05

1

0.95

th

V , NORMALIZED

0.9

GATE-SOURCE THRESHOLD VOLTAGE

-8-6-4-20

0.85

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

V = V

DS GS

I = -1mA

D

Figure 6. Gate Threshold Variation

with Temperature

BSS84 Rev. C1 / BSS110. Rev. A2