Fairchild Semiconductor BSS100, BSS123 Datasheet
September 1996
BSS100 / BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance. This product is particularly suited to low
voltage, low current applications, such as small servo
motor controls, power MOSFET gate drivers, and other
switching applications.
_______________________________________________________________________________
BSS100: 0.22A, 100V. R
BSS123: 0.17A, 100V. R
DS(ON)
DS(ON)
= 6Ω @ V
= 6Ω @ V
GS
GS
High density cell design for extremely low R
Voltage controlled small signal switch.
Rugged and reliable.
D
= 10V.
= 10V
DS(ON)
.
G
BSS100
Absolute Maximum Ratings T
BSS123
= 25°C unless otherwise noted
A
S
Symbol Parameter BSS100 BSS123 Units
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage 100 V
Drain-Gate Voltage (RGS < 20KΩ)
100 V
Gate-Source Voltage - Continuous ± 14 V
- Non Repetitive (TP < 50 µS)
± 20
Drain Current - Continuous 0.22 0.17 A
- Pulsed 0.9 0.68
P
TJ,T
T
D
L
Total Power Dissipation @ TA = 25°C 0.63 0.36 W
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum Lead Temperature for Soldering
300 °C
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
R
JA
θ
Thermal Resistacne, Junction-to-Ambient 200 350 °C/W
© 1997 Fairchild Semiconductor Corporation
BSS100 Rev. F1 / BSS123 Rev. F1
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA All 100 V
Zero Gate Voltage Drain Current VDS = 100 V, V
VDS = 100 V, V
VDS = 100 V, V
VDS = 60 V, V
VDS = 20 V, V
= 0 V
GS
= 0 V
GS
= 0 V TJ=125oC All 60 µA
GS
= 0 V
GS
= 0 V
GS
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V
VGS = 20 V, VDS = 0 V
BSS100
BSS123
BSS100
BSS123
BSS100
BSS123
15 µA
1 µA
10 nA
10 nA
10 nA
50 nA
ON CHARACTERISTICS (Note 1)
V
R
g
GS(th)
DS(ON)
FS
Gate Threshold Voltage VDS = VGS, ID = 1 mA All 0.8 1.4 2 V
Static Drain-Source On-Resistance VGS = 10 V, ID = 0.22 A
VGS = 10 V, ID = 0.17 A
VGS = 4.5 V, ID = 0.22 A
VGS = 4.5 V, ID = 0.17 A
Forward Transconductance VDS = 10 V, ID = 0.22 A
VDS = 10 V, ID = 0.17 A
BSS100
BSS123
BSS100
BSS123
BSS100
BSS123
2.8 6
2.8 6
3.2 10
3.2 10
0.08 0.4 S
0.08 0.4
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance All 10 15 pF
f = 1.0 MHz
All 29 60 pF
Reverse Transfer Capacitance All 2 6 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 0.28 A,
Turn - On Rise Time All 8 ns
VGS = 10 V, R
GEN
= 50 Ω
All 8 ns
Turn - Off Delay Time All 13 ns
Turn - Off Fall Time All 16 ns
Totall Gate Charge VDS = 10 V, ID = 0.22 A,
Gate-Source Charge All 0.15 0.25 nC
VGS = 10 V,
All 1.4 2 nC
Gate-Drain Charge All 0.2 0.4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuous Source Current
Maximum Pulse Source Current (Note 1)
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.44 A
VGS = 0 V, IS = 0.34 A
BSS100
BSS123
BSS100
BSS123
BSS100
BSS123
0.22 A
0.17
0.9 A
0.68
0.9 1.3 V
0.9 1.3
Ω
BSS100 Rev. F1 / BSS123 Rev. F1
Typical Electrical Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
V =10V
GS
5.0
4.0
3.5
V , DRAIN-SOURCE VOLTAGE (V)
DS
3.0
2.5
2.0
2.4
V =2.5V
2
1.6
DS(on)
R , NORMALIZED
1.2
DRAIN-SOURCE ON-RESISTANCE
0.8
0 0.1 0.2 0.3 0.4 0.5 0.6
GS
I , DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2.2
2
I = 220mA
D
V =10V
1.8
1.6
1.4
1.2
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
0.4
GS
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
3
V = 10V
2.5
1.5
DS(on)
R , NORMALIZED
0.5
DRAIN-SOURCE ON-RESISTANCE
GS
T = 125°C
J
2
25°C
1
0
0 0.2 0.4 0.6 0.8 1
I , DRAIN CURRENT (A)
D
3.0
-55°C
3.5
4.0
5.0
10
Figure 3. On-Resistance Variation
with Temperature.
1.2
V = V
DS
I = 250µA
1.1
1
0.9
th
V , NORMALIZED
0.8
GATE-SOURCE THRESHOLD VOLTAGE
0.7
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
D
Figure 5. Gate Threshold Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.15
I = 250µA
GS
DSS
BV , NORMALIZED
D
1.1
1.05
1
0.95
DRAIN-SOURCE BREAKDOWN VOLTAGE
0.9
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Breakdown Voltage Variation with
Temperature.
BSS100 Rev. F1 / BSS123 Rev. F1
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