Fairchild Semiconductor BF244C, BF244B, BF244A Datasheet
BF244A
BF244B
BF244C
BF244A / BF244B / BF244C
S
G
D
TO-92
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance. Sourced from Process 50.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
D
I
GF
T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage 30 V
Gate-Source Voltage - 30 V
Drain Current 50 mA
Forward Gate Current 10 mA
Storage Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BF244A / BF244B / BF244C
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance , Junctio n to Ambient 357
350
2.8
mW
mW/°C
C/W
°
C/W
°
µ
µ
N-Channel RF Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GSS(off)
V
GS
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = - 20 V, VDS = 0 5.0 nA
Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA - 0.5 - 8.0 V
Gate-Source Voltage
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current
SMALL SIGNAL CHARACTERISTICS
y
fs
y
os
y
rs
C
iss
C
rss
C
oss
NF Noise Figure
F(Yfs)
Forward Transfer Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz
Output Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz 40
Reverse Transfer Admittance VDS = 15 V, VGS = 0, f = 200 MHz 1.0
Input Capacitance VDS = 20 V, VGS = - 1.0 V 3.0 pF
Reverse Transfer Capacitance VDS = 20 V, VGS = - 1.0 V,
Output Capacitance VDS = 20 V, VGS = - 1.0 V,
Cut-Off Frequency V
= 1.0 µA, VDS = 0
I
G
= 15 V, ID = 200 µA
V
DS
244A
244B
244C
= 15 V, VGS = 0
V
DS
244A
244B
244C
= 15 V, VGS = 0, f = 200 MHz
V
DS
f = 1.0 MHz
f = 1.0 MHz
V
= 15 V, VGS = 0, RG = 1.0 kΩ,
DS
f = 100 MHz
= 15 V, VGS = 0 700 MHz
DS
30 V
- 0.4
- 1.6
- 3.2
2.0
6.0
12
3.0
- 2.2
- 3.8
- 7.5
6.5
15
25
6.5
5.6
0.7 pF
0.9 pF
1.5 dB
mmhos
mmhos
mhos
mhos
BF244A / BF244B / BF244C
V
V
V
mA
mA
mA
5
T ypical Characteristics
Transfer Characterist ics
20
V = -4.5V
GS(O FF)
16
12
8
4
D
I - DRAIN CURRENT (mA)
0
O
T = -55 C
A
O
T = +25 C
A
O
T = +125 C
A
-2.5 V
V - GA TE-SOURCE VOLTAGE(V)
GS
V = 15V
DS
O
T = -55 C
A
O
T = +25 C
A
T = +125 C
O
A
-5-4-3-2-10
Ch annel Resistance vs Temp erat ur e
1000
Ω
500
V = -1.0V
300
200
100
50
30
20
DS
r - DRAIN ON RESISTANCE ( )
10
GS(OFF)
-2.5 V
-5.0V
-8.0 V
V = 100mV
DS
V = 0 V
GS
-50 0 50 100 150
T - AMBIENT TEMPERATURE ( C)
A
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