Fairchild Semiconductor BC860, BC859 Datasheet
BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
BC856/857/858/859/860
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
-80
-50
-30
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
-65
-45
-30
Emitter-Base Voltage -5 V
Collector Current (DC) -100 mA
Collector Power Dissipation 310 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
V
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
V
BE
(on) Base-Emitter On Voltage VCE= -5V, IC= -2mA
V
BE
f
T
Collector Cut-off Current VCB= -30V , IE=0 -15 nA
DC Current Gain VCE= -5V, IC= -2mA 110 800
I
= -100mA, IB= -5mA
C
-90
-250
-300
-650
-700
= -100mA, IB= -5mA
I
C
-900
-600 -660 -750
= -5V, IC= -10mA
V
CE
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
150 MHz
-800
f=100MHz
C
ob
NF Noise Figure
Output Capacitance VCB= -10V , IE=0, f=1MHz 6 pF
: BC856/857/858
: BC859/860
: BC859
: BC860
VCE= -5V, IC= -200µA
f=1KHz, R
V
CE
R
=2KΩ, f=30~15000Hz
G
=2KΩ
G
= -5V, IC= -200µA
2
1
1.2
1.2
10
4
4
2
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
dB
dB
dB
dB
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
hFE Classification
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
Marking Code
Type 856A 856B 856C 857A 857B 857C 858A 858B 858C
Mark 9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC
Type 859A 859B 859C 860A 860B 860C
Mark 9DA 9DB 9DC 9EA 9EB 9EC
BC856/857/858/859/860
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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