Fairchild Semiconductor BC858C, BC856B-MR, BC856B Datasheet

PNP EPITAXIAL
BC856/857/858/859/860 SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS

• Suitable for automatic insertion in thick and thin-film circuits

• LOW NOISE: BC859, BC860

• Complement to BC846 ... BC850

ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

ELECTRICAL CHARACTERISTICS (TA=25°°C)

hFE CLASSIFICATION

MARKING CODE

Characteristic Symbol Rating Unit

Collector-Base Voltage

: BC856
: BC857/860
: BC858/859

Collector-Emitter Voltage

: BC856
: BC857/860

: BC858/859
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

-80

-50

-30

-65

-45

-30

-5

-100
310
150

-65 ~ 150

V
V
V

V
V
V
V

mA

mW

°C
°C

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage

Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance

Noise Figure : BC856/857/858
: BC859/860
: BC859

: BC860

I

CBO

h

FE

V

CE

(sat)

V

BE

(sat)

V

BE

(on)

f

T

C

CBO

NF

NF

VCB= -30V, IE=0
VCE= -5V, IC= -2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -10mA
f=100MHz
VCB= -10V, f=1MHz
VCE= -5V, IC= -200µA
f=1KHz, RG=2KΩ
VCE= -5V, IC= -200µA
RG=2KΩ
f=30~15000Hz

110

-600

-90

-250

-700

-900

-660
150

2
1

1.2

1.2

-15

800

-300

-650

-750

-800

6

10

4
4
2

nA

mV
mV
mV
mV
mV
mV

MHz

pF
dB

dB
dB
dB

Classification A B C

h

FE

110-220 200-450 420-800

TYPE 856A 856B 856C 857A 857B 857C 858A 858B 858C 859A 859B 859C 860A 860B 860C

MARK 9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC 9DA 9DB 9DC 9EA 9EB 9EC

SOT-23

1. Base 2. Emitter 3. Collector



1999 Fairchild Semiconductor Corporation

Rev. B

PNP EPITAXIAL
BC856/857/858/859/860 SILICON TRANSISTOR