Fairchild Semiconductor BC857C, BC857B, BC857A Datasheet
BC857A
BC857B
BC857C
C
BC857A / BC857B / BC857C
E
SOT-23
Mark: 3E / 3F / 3G
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Collector-Emitter Voltage 45 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
*BC857A / B / C
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW/°C
°
C
°
mW
C/W
ã1997 Fairchild Semiconductor Corporation
(BR)
(BR)
(BR)
µ
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Break down Voltage IC = 10 mA, IB = 045V
Collector-Base Brea kdown Voltage
Emitter-Base Breakdow n Voltage
I
= 10 µA, IE = 0
C
I
= 1.0 µA, IC = 0
E
Collector-Cutoff Current VCB = 30 V
V
= 30 V, TA = 150°C
CB
50 V
5.0 V
15
4.0
nA
A
DC Current Gain IC = 2.0 mA, VCE = 5.0 V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
)
= 100 mA, IB = 5.0 mA
I
C
Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V
I
= 10 mA, VCE = 5.0 V
C
BC857A
BC857B
BC857C
125
220
420
0.6 0.75
250
475
800
0.3
0.65
0.82
V
V
V
V
BC857A / BC857B / BC857C
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF Noise Figure IC = 0.2 mA, VCE = 5.0,
Current Gain - Bandwidth Produ ct IC = 10 mA, VCE = 5.0,
f = 100 mHz
Output Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF
= 2.0 kΩ, f = 1.0 kHz,
R
S
BW = 200 Hz
Typical Characteristics
T y pical Pulsed Current Gain
vs Collector Current
500
125 °C
400
300
25 °C
200
- 40 °C
100
0
0.01 0.1 1 10 100
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
0.1
0.05
0
0.1 1 10 100 300
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
100 MHz
β
= 10
25 °C
125 ºC
I - COLLECTOR CURRENT (mA)
C
10 dB
- 40 ºC
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