Fairchild FDB13AN06A0, FDP13AN06A0 service manual

FDB13AN06A0 / FDP13AN06A0

N-Channel PowerTrench® MOSFET
60V, 62A, 13.5mΩ

FDB13AN06A0 / FDP13AN06A0

July 2003

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82555

DRAIN

(FLANGE)

MOSFET Maximum Ratings T

= 11.5mΩ (Typ.), V

DS(ON)

(tot) = 22nC (Typ.), V

g

Body Diode

RR

FDP SERIES

GS

TO-220AB

= 10V, ID = 62A

GS

= 10V

GATE

SOURCE

DRAIN

C

GATE

SOURCE

= 25°C unless otherwise noted

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Syste m s

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

G

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

D

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 44 A

C

= 25oC, VGS = 10V, R

A

= 43oC/W) 10.9 A

θJA

62 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 56 mJ
Power dissipation 115 W

o

Derate above 25

C0.77W/

Operating and Storage Temperature -5 5 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

©2003 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-220,TO-263 1.3
Thermal Resistance Junction to Ambient TO-220, TO-263 ( Note 2) 62
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB13AN06A0 / FDP1 3AN06A0 Rev. A1

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB13AN06A0 FDB13AN06A0 TO-263AB 330mm 24mm 800 units
FDP13AN06A0 FDP13AN06A0 TO-220AB Tube N/A 50 units

FDB13AN06A0 / FDP13AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 62A, VGS = 10V - 0.0115 0.0135

D

I

= 31A, VGS = 6V - 0.022 0.034

Drain to S ou r c e On Re si st ance

D

= 62A, VGS = 10V,

I

D

T

= 175oC

J

- 0.026 0.030

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 260 - pF
Reverse Transfer Capacitance - 90 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 2.6 3.4 nC
Gate to Source Gate Charg e - 8.5 - nC
Gate Charge Threshold to Plateau - 5.9 - nC

V

DD

I

= 62A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 6.4 - nC

- 1350 - pF

22 29 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 9 - ns
Rise Time - 96 - ns
Turn-Off D elay Time - 24 - ns
Fall Time - 26 - ns
Turn-Off Time - - 74 ns

(VGS = 10V)

V

= 30V, ID = 62A

DD

V

= 10V, RGS = 12Ω

GS

--158ns

Drain-Source Diode Characteristics

I

= 62A - - 1.2 5 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse width = 100s.

©2003 Fairchild Semiconductor Corporation FDB13AN06A0 / FDP1 3AN06A0 Rev. A1

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 62A, dISD/dt = 100A/µs- -25ns

Reverse Recovered Charge ISD = 62A, dISD/dt = 100A/µs- -17nC

= 25°C, L = 45µH, IAS = 50A.

J

SD

I

= 31A - - 1.0 V

SD

FDB13AN06A0 / FDP13AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

80

60

40

, DRAIN CURRENT (A)

D

I

20

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

800

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

30

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2003 Fairchild Semiconductor Corporation FDB13AN06A0 / FDP1 3AN06A0 Rev. A1

FDB13AN06A0 / FDP13AN06A0

Typical Characteristics T

1000

100

OPERATION IN THIS

10

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PULSE
TJ = MAX RATED

T

= 25oC

C

0.1
1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= 25°C unless otherwise noted

C

10µs

100µs

1ms

DC

Figure 5. Forward Bias Safe Operating Area

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

80

10ms

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R

≠

0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

DSS

STARTING TJ = 25oC

- VDD)

- VDD) +1]

DSS

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

100

TC = 25oC

80

VGS = 20V

VGS = 10V

60

40

, DRAIN CURRENT (A)

D

I

20

0

TJ = 25oC

34567

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = -55oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

30

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

25

VGS = 6V

20

15

VGS = 10V

DRAIN TO SOURCE ON RESISTANCE(mΩ)

10

0 10203040506070

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

60

VGS = 6V

40

, DRAIN CURRENT (A)

D

I

20

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 5V

VGS = 10V, ID =62A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2003 Fairchild Semiconductor Corporation FDB13AN06A0 / FDP1 3AN06A0 Rev. A1