Datasheet FDB5800 Datasheet (Fairchild)

September 2005

FDB5800 N-Channel Logic Level PowerTrench® MOSFET

60V, 80A, 7mΩ

FDB5800 N-Channel Logic Level PowerTrench

Features

 r

 High performance trench technology for extermely low

 Low Gate Charge

 High power and current handling capability

 Qualified to AEC Q101

 RoHS Compliant

= 5.5mΩ (Typ.), V

DS(ON)

Rdson

= 5V, ID = 80A

GS

Applications

 Motor/ Body Load Control

 ABS Systems

 Power Train Management

 Injection Systems

 DC-DC Converters and Off-Line UPS

®

MOSFET

GATE

SOURCE

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

D

G

S

www.fairchildsemi.com1

FDB5800 N-Channel Logic Level PowerTrench

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current

Continuous (TC < 102oC, VGS = 10V)

I

D

Continuous (TC < 90oC, VGS = 5V) 80 A

Continuous (T

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 14 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

TJ, T

STG

Single Pulse Avalanche Energy (Note 1) 652 mJ

Power dissipation 242 W

Derate above 25oC 1.61 W/oC

Operating and Storage Temperature -55 to 175

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-263 0.62

Thermal Resistance Junction to Ambient TO-263 ( Note 2) 62.5

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB5800 FDB5800 TO-263AB 330mm 24mm 800 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

C

o

C/W

o

C/W

o

C/W

o

C

®

MOSFET

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 - 2.5 V

Drain to Source On Resistance

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 628 - pF

Reverse Transfer Capacitance - 262 - pF

Gate Resistance VGS = 0.5V, f = 1MHz - 1.4 - Ω

Total Gate Charge at 10V VGS = 0V to 10V

Total Gate Charge at 5V VGS = 0V to 5V - 55 72 nC

Threshold Gate Charge VGS = 0V to 1V - 6.0 - nC

Gate to Source Gate Charge - 18.4 - nC

Gate Charge Threshold to Plateau - 12.5 - nC

Gate to Drain “Miller” Charge - 20.1 - nC

VDS = 48V - - 1

VGS = 0V TC = 150oC - - 250

ID = 80A, VGS = 10V - 4.6 6.0

ID = 80A, VGS = 4.5V - 5.8 7.2

ID = 80A, VGS = 5V - 5.5 7.0

ID = 80A, VGS = 10V, TJ = 175oC

VDS = 15V, VGS = 0V,

- 10 12.6

- 6625 - pF

f = 1MHz

- 104 135 nC

VDD = 30V ID = 80A Ig = 1.0mA

µA

mΩ

FDB5800 Rev. A

www.fairchildsemi.com2

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 20.3 - ns

Rise Time - 22.0 - ns

Turn-Off Delay Time - 27.1 - ns

Fall Time - 12.1 - ns

Turn-Off Time - - 59.0 ns

GS

= 5V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V. 2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time ISD = 60A, dISD/dt = 100A/µs - - 44 ns

Reverse Recovered Charge ISD = 60A, dISD/dt = 100A/µs - - 57 nC

- - 62.1 ns

VDD = 30V, ID = 80A VGS = 5V, RGS = 2Ω

I

= 80A - - 1.25 V

SD

ISD = 40A - - 1.0 V

FDB5800 N-Channel Logic Level PowerTrench

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

®

MOSFET

FDB5800 Rev. A

www.fairchildsemi.com3

FDB5800 N-Channel Logic Level PowerTrench

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

TC, CASE TEMPERATURE (oC)

Figure 1.

Normalized Power Dissipation vs Case

= 25°C unless otherwise noted

C

125

Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

140

120

100

80

60

40

, DRAIN CURRENT (A)

D

I

R

20

150

-3

t, RECTANGULAR PULSE DURATION (s)

0

Figure 2.

-2

10

Maximum Continuous Drain Current vs

CURRENT LIMITED

BY PACKAGE

VGS = 5V

= 0.62°C/W

JC

θ

5025 125

TC, CASE TEMPERATURE (°C)

100 15075

Case Temperature

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x R

-1

10

P

DM

θJC

0

10

VGS =10V

2

+ T

C

®

MOSFET

t

1

t

2

1

10

1000

, PEAK CURRENT (A)

DM

I

100

50

FDB5800 Rev. A

10

VGS = 5V

-5

Figure 3.

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

10

Normalized Maximum Transient Thermal Impedance

TC = 25oC

FOR TEMPERATURES

ABOVE 25

CURRENT AS FOLLOWS:

I = I

-3

10

Figure 4.

Peak Current Capability

-2

10

t, PULSE WIDTH (s)

-1

10

o

C DERATE PEAK

175 - T

25

0

10

C

150

1

10

www.fairchildsemi.com4

FDB5800 N-Channel Logic Level PowerTrench

Typical Characteristics T

1000

100

10

OPERATION IN THIS AREA MAY BE LIMITED BY r

, DRAIN TCURRENT (A)

D

I

Figure 5.

160

140

120

100

, DRAIN TCURRENT (A)

D

I

DS(ON)

1

SINGLE PULSE T

= MAX RATED

J

= 25oC

T

C

0.1

1

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

10

Forward Bias Safe Operating Area

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VDS = 6V

80

60

40

20

0

02 5

134

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

100ms

DC

100

, AVALANCHE CURRENT (A)

AS

I

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

, DRAIN TCURRENT (A)

D

TA = 25oC

TA = -55oC

I

500

100

10

Figure 6.

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

≠

If R t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

1

0.01

0.1

tAV, TIME IN AVALANCHE (ms)

Unclamped Inductive Switching

- VDD)

0

1

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

10

100

1000

Capability

160

140

120

100

80

60

40

20

0

01.02.0

10V

5.0V

0.5 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

4.5V

4.0V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

®

MOSFET

3.5V

3.0V

Figure 7.

0.016

0.014

0.012

0.010

0.008

, ON-RESISTANCE(OHM)

0.006

DS(ON)

0.004

R

0.002 2

Figure 9.

FDB5800 Rev. A

Transfer Characteristics Figure 8. Saturation Characteristics

ID = 20A

= 25oC

T

A

48

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

T

= 175oC

A

610

On-Resistance Variation vs Gate-to-

Source Voltage

2.2

2.0

1.8

1.6

1.4

NORMALIZED

1.2

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.8

0.6

- 80 40 160

Figure 10.

ID = 80A

= 10V

V

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

0- 40 80 120

TJ, AMBIENT TEMPERATURE (oC)

Normalized Drain to Source On

Resistance vs Junction Temperature

200

www.fairchildsemi.com5

FDB5800 N-Channel Logic Level PowerTrench

Typical Characteristics T

1.4

VGS = V

1.2

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

0.2

- 80 40 160

Figure 11.

Normalized Gate Threshold Voltage vs

0- 40 80 120 200

TJ, AMBIENT TEMPERATURE (oC)

Junction Temperature

20000

10000

1000

CAPACITANCE (pF)

f = 1MHz

= 0V

V

GS

100

0.1 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID = 250µA

C

RSS

1

= 25°C unless otherwise noted

C

DS

NORMALIZED DRAIN TO SOURCE

Breakdown Voltage vs Junction Temperature

C

ISS

C

OSS

, GATE- SOURCE VOLTAGE

GS

V

10

1.2

ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

0.9

- 80 40 160

Figure 12.

10

8

6

4

2

0

0- 40 80 120 200

TJ, AMBIENT TEMPERATURE (oC)

Normalized Drain to Source

VDD =30V

WAVEFORMS IN ASCENDING ORDER: ID = 80A ID = 1A

20060100

40 80

Qg, GATE CHARGE (nC)

®

MOSFET

Figure 13.

FDB5800 Rev. A

Capacitance vs Drain to Source

Voltage

Figure 14.

Gate Charge Waveforms for Constant

Gate Current

www.fairchildsemi.com6

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™

FPS™

Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™

FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

®

FAST FAST r™

LittleFET™

FRFET™ GlobalOptoisolator™ GTO™ HiSeC™

2

I

C™ i-Lo™ ImpliedDisconnect™

IntelliMAX™

®

ISOPLANAR™ MICROCOUPLER™

MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC

®

OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™

PowerSaver™ PowerTrench

®

QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ SILENT SWITCHER SMART ST ART™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™

®

Wire™

®

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I16