Datasheet FDA15N65 Datasheet (Fairchild)

FDA15N65

650V N-Channel MOSFET

FDA15N65 650V N-Channel MOSFET

January 2007

TM

UniFET

Features

• 16A, 650V, R

• Low gate charge ( typical 48.5 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 23.6 pF)

rss

= 0.44Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FDA Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDA15N65 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

T

J, TSTG

T

L

Drain-Source Voltage 650 V

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 16 A

Repetitive Avalanche Energy (Note 1) 26 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

(Note 1)

(Note 2)

16

9.6

64

637 mJ

260

2.1

300 °C

W/°C

A A

A

W

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

FDA15N65 Rev. A

Thermal Resistance, Junction-to-Case -- 0.48 °C/W

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Widt h Quantity

FDA15N65 FDA15N65 TO-3PN -- -- 30

FDA15N65 650V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV / ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 650 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V

ID = 250μA, Referenced to 25°C -- 0.65 -- V/°C

VDS = 520V, TC = 125°C

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V

Static Drain-Source On-Resistance

Forward Transconductance VDS = 40V, ID = 8A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 295 385 pF

VGS = 10V, ID = 8A -- 0.36 0.44 Ω

(Note 4)

-- 19.2 -- S

-- 2380 3095 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 23.6 35.5 pF

Turn-O n Delay Time VDD = 325V, ID = 15A

Turn-O n Ris e Ti me -- 125 260 ns

RG = 21.7Ω

-- 65 140 ns

Turn-O ff Delay Time -- 105 220 ns

Turn-O ff Fall Time -- 65 140 ns

Total Gate Charge VDS = 520V, ID = 15A

Gate-Source Charge -- 14.0 -- nC

VGS = 10V

Gate-Drain Charge -- 21.2 -- nC

(Note 4, 5)

-- 48.5 63.0 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 64 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 16A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 15A

Reverse Recovery Charge -- 5.69 -- μC

dIF/dt =100A/μs (Note 4)

-- 496 -- ns

10

1

μA μA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 4.6mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDA15N65 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

24681012

10

0

10

1

10

2

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

0 1020304050

0.0

0.2

0.4

0.6

0.8

1.0

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [ A]

0.2 0. 4 0.6 0.8 1.0 1. 2 1.4

10

0

10

1

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 10 20304050

0

2

4

6

8

10

12

VDS = 325V

VDS = 130V

VDS = 520V

* Note : ID = 15A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDA15N65 650V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDA15N65 Rev. A

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. V

GS

= 0 V

2. I

D

= 250 μA

BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS

= 10 V

2. I

D

= 5.5 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperat ure [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS

= 10 V

2. I

D

= 8 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10 μs

DC

10 ms

100 μs

Operation in This Area is Limited by R

DS(on)

* Notes :

1. T

C

= 25 oC

2. T

J

= 150 oC

3. Single Pulse

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

0

3

6

9

12

15

18

I

D

, Drain Current [A]

TC, Case Temperature [oC]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* Notes :

1. Z

θJC

(t) = 0.48 oC/W Max.

2. D uty Fa ctor, D = t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, Sq u are W ave Pu lse D u ratio n [s ec]

t

1

P

DM

t

2

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

FDA15N65 650V N-Channel MOSFET

Figure 11. Transient Thermal Response Curve

FDA15N65 Rev. A

4 www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDA15N65 650V N-Channel MOSFET

FDA15N65 Rev. A

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDA15N65 650V N-Channel MOSFET

FDA15N65 Rev. A

6 www.fairchildsemi.com

Mechanical Dimensions

TO-3PN

FDA15N65 650V N-Channel MOSFET

FDA15N65 Rev. A

Dimensions in Millimeters

7 www.fairchildsemi.com

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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UniFET™ VCX™ Wire™

FDA15N65 650V N-Channel MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for

product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

FDA15N65 Rev. A

Rev. I22

8 www.fairchildsemi.com