Datasheet FDB44N25 Datasheet (Fairchild)

FDB44N25

250V N-Channel MOSFE T

FDB44N25 250V N-Channel MOSFET

September 2005

TM

UniFET

Features

• 44A, 250V, R

• Low gate charge ( typical 47 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 60 pF)

rss

= 0.069Ω @VGS = 10 V

DS(on)

G

D

S

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

{

z





z

{

G

z z

z

{

S

Absolute Maximum Ratings

Symbol Parameter FDB44N25 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

J, TSTG

T

L

Drain-Source Voltage 250 V Drain Current - Continuous (TC = 25°C)

- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current (Note 1) 44 A Repetitive Avalanche Energy (Note 1) 30.7 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

44

26.4 176 A

2055 mJ

307

2.45

300 °C

A A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

FDB44N25 Rev A

Thermal Resistance, Junction-to-Case -- 0.41 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB44N25 FDB44N25TM D2-PAK 330mm 24mm 800

FDB44N25 250V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. M ax Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.25--V/°C

D

V

= 200V, TC = 125°C

DS

--

1

10

µA µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V Static Drain-Source

On-Resistance Forward Transconductance VDS = 40V, ID = 22A

Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance -- 450 585 pF

= 10V, ID = 22A -- 0.058 0.069 Ω

V

GS

(Note 4)

-- 32 -- S

-- 2210 2870 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 60 90 pF

Turn-On Delay Time VDD = 125V, ID = 44A

= 25Ω

R

Turn-On Rise Time -- 400 810 ns

G

-- 55 120 ns

Turn-Off Delay Time -- 85 180 ns Turn-Off Fall Time -- 115 240 ns Total Gate Charge VDS = 200V, ID = 44A

= 10V

V

Gate-Source Charge -- 18 -- nC

GS

Gate-Drain Charge -- 24 -- nC

(Note 4, 5)

-- 47 61 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 44 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 44A -- -- 1.4 V Reverse Recovery Time VGS = 0V, IS = 44A

/dt =100A/µs (Note 4)

dI

Reverse Recovery Charge -- 1.8 -- µC

F

-- 195 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 44A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDB44N25 Rev A

2 www.fairchildsemi.com

Typical Perfor mance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDB44N25 250V N-Channel MOSFET

2

10

1

10

, Drain Current [A]

D

I

0

10

V Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

-1

GS

0

10

VDS, Drain-So urce Voltage [V]

2

10

150oC

25oC

Notes :

※

1. 250µs Pulse Test

2. T

= 25

℃

C

1

10

1

10

, Drain Current [A]

D

I

0

10

2 4 6 8 10 12

VGS, Gate-Source Voltage [V]

-55oC

※

1. VDS = 40V

2. 250µ s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.125

0.100

0.075

[Ω ],

DS(ON)

0.050

R

0.025

Drain-Source On-Resistance

0.000 0 25 50 75 100 125 150

VGS = 10V

ID, Drain Current [A]

VGS = 20V

Note : T

※

2

10

= 25

℃

J

1

10

150

℃

, Reverse Drain Current [A]

DR

I

0

10

0.20.40.60.81.01.21.41.61.8

VSD, Source-Drain voltage [V]

25

℃

Notes :

※

1. VGS = 0V

2. 250µ s Pulse Test

Notes :

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

5000

4000

3000

2000

Capacitances [pF]

1000

FDB44N25 Rev A

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

oss

C

iss

Note ;

※

1. VGS = 0 V

10

2. f = 1 MHz

1

C

rss

0

-1

10

0

10

VDS, Drain-Source Voltage [V]

12

10

8

VDS = 50V VDS = 125V VDS = 200V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060

※

Note : I

D

= 44A

QG, To ta l Gate Ch arge [nC ]

3 www.fairchildsemi.com

Typical Perfor mance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

FDB44N25 250V N-Channel MOSFET

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

Notes :

※

1. VGS = 0 V

2. I

TJ, Junction Temperature [oC]

= 250 µA

D

3.0

2.5

2.0

1.5

, (Normal ized)

1.0

DS(ON)

R

Drain-S ource On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

Notes :

※

1. VGS = 10 V = 22 A

2. I

D

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

3

10

2

10

1

10

Operation in This Area

0

10

, Drain Current [A]

D

I

-1

10

-2

10

is Limited by R

0

10 ms

100 ms

DC

DS(on)

Notes :

※

1. TC = 25 oC

2. T

3. Single Pulse

1

10

VDS, Drain-Source Voltage [V]

1 ms

= 150 oC

J

10

100 µs

2

10 µs

50

40

30

20

, Drain Current [A]

D

I

10

0

25 50 75 100 125 150

TC, Case Te mperature [ ]

℃

Figure 11. Transient Thermal Response Curve

D=0.5

-1

10

0.2

FDB44N25 Rev A

0.1

0.05

0.02

-2

0.01

10

(t), Thermal Response

θ JC

Z

-5

10

single pulse

-4

10

-3

10

t1, S q ua re W av e P u lse Du ra tion [s e c ]

N o te s :

※

1. Z

(t) = 0.41 /W M ax.

2. D uty F a c to r , D = t1/t

3. TJM - TC = PDM * Z

P

DM

-2

θ JC

10

℃

θ JC

t

1

t

2

-1

4 www.fairchildsemi.com

2

(t)

0

10

1

10

12V

200nF

3mA

50K

FDB44N25 250V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

V

GS

DS

GS

10V

Q

g

Q

gs

Q

gd

Charge

Same Type

Ω

300nF

V

GS

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

I

(t)

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FDB44N25 Rev A

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse period

G

Preliminary

V

DD

FDB44N25 250V N-Channel MOSFET

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FDB44N25 Rev A

6 www.fairchildsemi.com

Mechanical Dimensions

FDB44N25 250V N-Channel MOSFET

D2-PAK

FDB44N25 Rev A

7 www.fairchildsemi.com

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Advance Information

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No Identification Needed

Formative or In Design

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effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

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Rev. I16