Datasheet FDB52N20 Datasheet (Fairchild)

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FDB52N20

200V N-Channel MOSFET

FDB52N20 200V N-Channel MOSFET

July 2008

UniFET

Features

• 52A, 200V, R

• Low gate charge ( typical 49 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 66 pF)

rss

= 0.049Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

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z z

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Absolute Maximum Ratings

Symbol Parameter FDB52N20 Unit

DSS

GSS

dv/dt Peak Diode Recovery dv/dt P

J, TSTG

Drain-Source Voltage 200 V Drain Current - Continuous (TC = 25°C)

- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

52 33

208 A

2520 mJ

52 A

35.7 mJ

4.5 V/ns

357

2.86

300 °C

A A

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

θJC

* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

FDB52N20 Rev. A

Thermal Resistance, Junction-to-Case -- 0.35 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB52N20 FDB52N20TM D2-PAK 330mm 24mm 800

FDB52N20 200V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

DSS

∆BV / ∆T

DSS

GSSF

GSSR

On Characteristics

GS(th)

DS(on)

Dynamic Characteristics

iss

oss

rss

Switching Characteristics

d(on)

d(off)

Drain-Source Diode Characteristics and Maximum Ratings

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 52A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 200 -- -- V Breakdown Voltage Temperature

DSS

Coefficient

Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V

= 250µA, Referenced to 25°C--0.2--V/°C

= 160V, TC = 125°C

µA µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V Static Drain-Source

On-Resistance Forward Transconductance VDS = 40V, ID = 26A

Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance -- 540 700 pF

= 10V, ID = 26A -- 0.041 0.049 Ω

(Note 4)

-- 35 -- S

-- 2230 2900 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 66 100 pF

Turn-On Delay Time VDD = 100V, ID = 52A

= 25Ω

Turn-On Rise Time -- 175 359 ns

-- 53 115 ns

Turn-Off Delay Time -- 48 107 n s Turn-Off Fall Time -- 29 68 ns Total Gate Charge VDS = 160V, ID = 52A

= 10V

Gate-Source Charge -- 19 -- nC

Gate-Drain Charge -- 24 -- nC

(Note 4, 5)

-- 49 63 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 52 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 52A -- -- 1.4 V Reverse Recovery Time VGS = 0V, IS = 52A

/dt =100A/µs (Note 4)

Reverse Recovery Charge -- 1.3 -- µC

, Starting TJ = 25°C

DSS

-- 162 -- ns

FDB52N20 Rev. A

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDB52N20 200V N-Channel MOSFET

, Drain Current [A]

-1

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

-1

VDS, Drain-Source Voltage [V]

* Notes :

1. 250

2. T

µs Pulse Test

= 25°C

150°C

, Drain Current [A]

2 4 6 8 10 12

25°C

VGS, Gate-Source Voltage [V]

-55°C

* Notes :

1. V

2. 250

= 40V

µs Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.12

0.10

0.08

[Ω],

0.06

DS(ON)

0.04

0.02

Drain-Source On-Resistance

0.00 0 25 50 75 100 125 150

VGS = 10V

VGS = 20V

ID, Drain Current [A]

* Note : TJ = 25°C

, Reverse Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150

℃

VSD, Source-Drain voltage [V]

℃

* Notes :

1. V

= 0V

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

5000

4000

3000

2000

Capacitances [pF]

1000

-1

FDB52N20 Rev. A

oss

iss

rss

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

= C

rss

* Note ;

1. V

2. f = 1 MHz

= 0 V

VDS = 40V VDS = 100V VDS = 160V

, Gate-Source Voltage [V]

0 102030405060

* Note : ID = 52A

QG, Total Gate Cha rg e [nC]

3 www.fairchildsemi.com

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

FDB52N20 200V N-Channel MOSFET

1.2

3.0

2.5

1.1

2.0

1.0

, (Normalized)

DSS

0.9

* Notes :

1. V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

= 0 V

= 250µA

1.5

, (Normalized)

1.0

DS(ON)

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

* Notes :

1. V

2. I

= 26 A

= 10 V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Operation in This Area

, Drain Current [A]

-1

-2

is Limited by R

10 ms

100 ms

DS(on)

* Notes :

1. T

2. T

3. Single Pulse

VDS, Drain-Source Voltage [V]

100 µs

1 ms

= 25°C = 150°C

10 µs

, Drain Current [ A]

25 50 75 100 125 150

TC, Case Temperature [°C]

FDB52N20 Rev. A

Figure 11. Transient Thermal Response Curve

D=0.5

-1

0.2

0.1

0.05

0.02

-2

(t), Thermal Response Z

0.01

θJC

-5

single pulse

-4

-3

t1, Sq u ar e W a ve P u lse D ura tion [s ec ]

4 www.fairchildsemi.com

-2

* Note s :

(t) = 0.35° C/W Max.

1. Z

θJC

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

-1

1/t2

(t)

θJC

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12V

200nF

3mA

50K

FDB52N20 200V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

10V

Charge

Same Type

300nF

Same Type

as DUT

DUT

Resistive Switching Test Circuit & Waveforms

10V

DUT

90%

10%

d(on)tr

d(off)

off

Unclamped Inductive Switching Test Circuit & Waveforms

DSS

IDI

DUT

----

=LI

(t)

DSS

--------------------

-------------------BV

DSS-VDD

Time

(t)

FDB52N20 Rev. A

5 www.fairchildsemi.com

Page 6

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

Driver

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse per iod

FDB52N20 200V N-Channel MOSFET

( Driver )

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode

Forward Voltage Drop

di/dt

10V

FDB52N20 Rev. A

6 www.fairchildsemi.com

Page 7

Mechanical Dimensions

FDB52N20 200V N-Channel MOSFET

D2-PAK

FDB52N20 Rev. A

7 www.fairchildsemi.com

Page 8

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.

Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter

* EZSWITCH™ and FlashWriter

FPS™ F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™

are trademarks of System General Corporation, used under license by Fairchild Semiconduct or.

The Power Franchise

TinyBoost™ TinyBuck™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

FDB52N20 200V N-Channel MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) suppor t or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support

Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semiconduct or products are experiencing counterfei ting of their parts. Customers who inadvertently purchase counterfeit parts experi ence man y proble ms such as loss of b rand repu tati on, sub sta nd ard p erforman ce, fail ed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our cu stomer s fro m the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directl y from Fairchild or fr om Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sour ces. Farichild is committed to committed to combat this globa l problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is disco ntinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I35

FDB52N20 Rev. A

www.fairchildsemi.com